Carl Zeiss Smt Gmbh

Daniel Golde

Toralf Gruner

Johannes Ruoff

Stephan Andre

Norbert Wabra

Sonja Schneider

Ricarda Schoemer

Stefan Xalter

Ulrich Loering

Vitaliy Shklover

Kerstin Hild

Ralf Zweering

Hans Michael Stiepan

Benjahman Julius Modeste

Stephan André

Ricarda SCHÖMER

A stop, such as a numerical aperture stop, obscuration stop or false-light stop, for a lithography apparatus, includes a light-transmissive aperture and a stop element, in which or at which the aperture is provided. The stop element is opaque and fluid-permeable outside the aperture.

Stop, optical system and lithography apparatus

A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

Mirror, in particular for a microlithographic projection exposure apparatus

A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength &#x3bb; from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask in a projection exposure apparatus includes using an anamorphic projection lens

Projection exposure method and projection exposure apparatus

Growing community of inventors

Oberkochen, Germany

Daniel Golde