Nikon Corporation

Nikon Metrology Nv

Nikon Corooration

Daniel Gene Smith

Eric Peter Goodwin

David Michael Williamson

Michael B Binnard

Alexander H Cooper

Michael R Sogard

Donis George Flagello

Anthony R Slotwinski

Stephen P Renwick

Mina A Rezk

Thomas M Hedges

W Thomas Novak

Alec Paul Robertson

Paul Derek Coon

Johnathan Marquez

Brian L Stamper

Brett William Herr

Lloyd Frederick Holland

Hirohisa Tanaka

Steven Douglas Slonaker

Michel Pharand

Jonathan Kyle Wells

Katsura Otaki

Patrick S Chang

Motofusa Ishikawa

Matthew Parker-McCormick Bjork

Goldie Goldstein

Matthew D Rosa

Heather Lynn Durko

Hidemitsu Toba

Shunsuke Kibayashi

Alec Robertson

Alexander Cooper

Collection reflectors with multiple reflector elements defined on a curved surface are used to collect EUV optical radiation from an EUV emitting area. Each of the reflector elements can image the emitting area at or near a corresponding reflective element of a second multi-element reflector that overlaps radiation from each of the multiple reflector element of the collection reflector to illuminate a grating reticle. Systems with such a collection reflector can use fewer optical elements. In addition, grating reticles are defined on a curve substrate an include a plurality of grating phase steps so that the grating reticle provides phase curvature along two axes but with physical curvature along a single axis. Methods of producing varying duty cycle 1D patterns are also disclosed.

Curved reticle by mechanical and phase bending along orthogonal axes

3D metrology techniques are disclosed for determining a changing topography of a substrate processed in an additive manufacturing system. Techniques include fringe scanning, simultaneous fringe projections, interferometry, and x-ray imaging. The techniques can be applied to 3D printing systems to enable rapid topographical measurements of a 3D printer powder bed, or other rapidly moving, nearly continuous surface to be tested. The techniques act in parallel to the system being measured to provide information about system operation and the topography of the product being processed. A tool is provided for achieving higher precision, increasing throughput, and reducing the cost of operation through early detection and diagnosis of operating problems and printing defects. These techniques work well with any powder bed 3D printing system, providing real-time metrology of the powder bed, the most recently printed layer, or both without reducing throughput.

Metrology for additive manufacturing

A system for measuring a target grating includes an illumination source, a reference transmission grating, a pupil filter, and a detector. The illumination source is disposed to generate an incident light beam that illuminates the reference transmission grating. The reference transmission grating splits the incident light beam into a plurality of diffraction orders. The plurality of diffraction orders interrogates a target grating. The reference transmission grating and the target grating are parallel. The pupil filter allows transmission of a subset of diffraction orders of light that has been diffracted and/or reflected from the target grating after being split again by passing through the reference transmission grating. The detector takes a measurement of the subset of diffraction orders of light after transmission through the pupil filter.

Spatially filtered talbot interferometer for wafer distortion measurement

A method for measuring a spatial distortion of a target surface (110) of a workpiece (110A). Light is transmitted twice through a reference pattern-generator (104) and impinged upon a workpiece pattern-generator (108). Then, with an optical detector (116), first and second beams formed by the light as a result of interaction with two pattern- generators (104) (106) is acquired to produce a signal characterizing geometry of interference fringes formed at the detector (116) by the first and second beams. Indicia representing at least one of a type and a value of spatial distortion of the target surface (110) is generated and recorded. A system embodying the implementation of the method.

Measurement of a change in a geometrical characteristic and/or position of a workpiece

A catoptric system having a reference axis and first, second, and third reflectors. The first reflector contains a pattern-source carrying a substantially one-dimensional pattern. A combination of the second and third reflectors is configured to form an optical image of the pattern, with a demagnification coefficient N>1 in extreme UV light, and with only two beams of light that have originated at the first reflector as a result of irradiation of the first reflector with light incident upon it. An exposure apparatus employing the catoptric system and method of device manufacturing with the use of the exposure apparatus.

Optical objective for operation in EUV spectral region

An integrated optical assembly is provided, with enhancements that are particularly useful when the integrated optical assembly forms part of a laser radar system. The integrated optical assembly produces a reference beam that is related to the optical characteristics of a scanning reflector, or to changes in position or orientation of the scanning reflector relative to a source. Thus, if the scanning reflector orientation were to shift from its intended orientation (due e.g. to thermal expansion) or if characteristics of the scanning reflector (e.g. the index of refraction of the scanning reflector) were to change on account of temperature changes, the reference beam can be used to provide data that can be used to account for such changes. In addition, if the scanning reflector were to be positioned in an orientation other than the orientation desired, the reference beam can be used in identifying and correcting that positioning.

Optical assembly, method for producing data in the same, and method for manufacturing structure

A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of two optical reflectors disposed sequentially to transfer EUV radiation incident onto the first optical component to the pattern-source the substantially one-dimensional pattern of which is disposed in a curved surface. In one case, such combination includes only two optical reflectors (each may contain multiple constituent components). The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes a projection optical sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

Illumination system with curved 1d-patterned mask for use in EUV-exposure tool

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N&#x3e;1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Euv lithography system for dense line patterning

A position encoder for monitoring position of an object includes a target pattern, an illumination system, an image sensor, and a control system. The illumination system generates (i) a first illumination beam that is directed toward and impinges on the target pattern, the first illumination beam having a first beam characteristic; and (ii) a second illumination beam that is directed toward and impinges on the target pattern, the second illumination beam having a second beam characteristic that is different than the first beam characteristic. The image sensor is coupled to the object and is spaced apart from the target pattern. The image sensor senses a first set of information from the first illumination beam impinging on the target pattern and senses a second set of information from the second illumination beam impinging on the target pattern. The control system analyzes the first set of information and the second set of information to monitor the position of the object.

High-resolution position encoder with image sensor and encoded target pattern

A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of only three optical components disposed sequentially to transfer EUV radiation incident the first optical component onto the pattern-source. The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes a projection optic sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

Illumination system with flat 1D-patterned mask for use in EUV-exposure tool

Prediction of a distribution of light in an illumination pupil of an illumination system includes identifying component(s) of the illumination system the adjustment of which affects this distribution and simulating the distribution based on a point spread function defined in part by the identified components. The point spread function has functional relationship with configurable setting of the illumination settings.

Compensation for Goos-Hanchen error in autofocus systems

EUV lithography system for dense line patterning

New and useful concepts for an autofocus system and method are provided. A basic concept uses fringe projection in an autofocus system and method. A further aspect provides spatial filtering concepts for the fringe projection concept. In yet another aspect, the fringe projection autofocus system and method is provided with temporal phase shifting using no moving parts. In a still further aspect, the fringe projection autofocus system and method is provided with unambiguous height measurement concepts.

Autofocus system and method

An extreme ultraviolet lithography system () that creates a pattern () having a plurality of densely packed parallel lines () on a workpiece () includes a patterning element (); an EUV illumination system () that directs an extreme ultraviolet beam (A) at the patterning element (); a projection optical assembly () that directs the extreme ultraviolet beam diffracted off of the patterning element () at the workpiece (); and a pattern blind assembly () positioned in a beam path () of the extreme ultraviolet beam (A). The pattern blind assembly () shapes the extreme ultraviolet beam (A) so that an exposure field () on the workpiece () has a polygonal shape.

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Tucson, AZ, United States of America

Daniel Gene Smith