X-fab Semiconductor Foundries Ag

Technische Universitaet Ilmenau

Daniel Gaebler

Konrad Bach

Wolfgang Einbrodt

Xuezhou Cao

Michael Fischer

Mike Stubenrauch

A light shield for shielding a light sensitive element in an image sensor comprising a primary plate located such as to shield the light sensitive element from incident light, the primary plate comprising at least one aperture and the or each aperture being associated with a light blocking structure, wherein the light blocking structure comprises a secondary plate and a wall; the wall is arranged between the primary plate and the secondary plate, and is configured to act as a light barrier to light passing between the primary plate and the secondary plate.

Light shield for light sensitive elements

A CMOS image sensor pixel () comprising a photosensitive element () for generating a charge in response to incident light; a plurality of charge storage elements (); a plurality of transfer gates () for enabling the transfer of charge between the photosensitive element and an associated one of the charge storage elements; and one or more first electrical connections () for placing at least two of the plurality of charge storage elements in mutual electrical contact.

Image lag free pixel

A window opening in a semiconductor component is produced on the basis of a gate structure which serves as an efficient etch resist layer in order to reliably etch an insulation layer stack without exposing the photosensitive semiconductor area. The polysilicon in the gate structure is then removed on the basis of an established gate etching process, with the gate insulation layer preserving the integrity of the photosensitive semiconductor material.

Semiconductor component with a window opening as an interface for ambient coupling

The invention relates to methods and devices comprising a nanostructure () for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure () is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer () can be reduced by supplying a buffer layer (). Many applications are disclosed.

Production of self-organized pin-type nanostructures, and the rather extensive applications thereof

The invention relates to processes for the production and elements (components) with a nanostructure () for improving the optical behavior of components and devices and/or for improving the behavior of sensors by enlarging the active surface area. The nanostructure () is produced in a self-masking fashion by means of RIE etching and its material composition can be modified and it can be provided with suitable cover layers.

Uses of self-organized needle-type nanostructures

In an integrated circuit, a light sensitive area is protected against radiation by arranging a light blocking layer sequence () on top of the light sensitive area. The light blocking layer sequence comprises one or several metal layers () and a silicon layer () for the purpose of absorption. A moth eye structure is provided on the silicon layer. Thereby, a radiation incident by reflection is minimized in such a way that also stray light can effectively be kept from the light sensitive area below the light blocking layer sequence ().

Light-blocking layer sequence having one or more metal layers for an integrated circuit and method for the production of the layer sequence

By means of an RIE etch process for silicon (), a pin-type structure () without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interference lithography, and the like) by selecting the gas components of the etch plasma in self-organization wherein, among others, a broadband antireflective behavior is obtained that may be applicable in many fields.

Growing community of inventors

Apolda OT Sulzbach, Germany

Daniel Gaebler