M/a -com, Inc.

Teraburst Networks, Inc.

Daniel G Curcio

Timothy Edward Boles

David Hoag

Joel Lee Goodrich

Noyan Kinayman

Jules D Levine

Ross A La Rue

A compound semiconductor device is comprising a compound semiconductor substrate () having a ground plane (); an active element () disposed on the substrate; a passive element () disposed on the substrate and electrically coupled to the active element; and an insulating layer () adjacent the substrate and interposed between the passive device and ground surface such that there is no resistive ground path from the passive device to the ground surface.

High voltage semiconductor device

A method and apparatus are disclosed for reducing crosstalk and dispersion in a crosspoint monolithic microwave integrated circuit (MMIC) switch array operating in a range between DC and microwave frequencies. In accordance with an exemplary embodiment, the crosspoint MMIC switch array includes a dielectric stack, a substrate, a first ground plane, a plurality of thyristor switches, a plurality of signal transmission lines arranged in rows; and a plurality of signal transmission lines arranged in columns. The plurality of signal transmission lines arranged in columns intersect the plurality of signal transmission lines arranged in rows at a plurality of intersection points. Each of the plurality of thyristor switches is associated with one of the plurality of intersection points. Each of the plurality of thyristor switches is in electrical contact with the signal transmission lines that intersect at the associated intersection point.

Crosstalk reduction in a crosspoint thyristor switching array using a shielded dielectric stack

Growing community of inventors

Nashua, NH, United States of America

Daniel G Curcio