Azur Space Solar Power Gmbh

3-5 Power Electronics Gmbh

Azur Space

Daniel Fuhrmann

Gregor Keller

Clemens Waechter

Wolfgang Guter

Matthias Meusel

Volker Dudek

Gerhard Strobl

Thomas Lauermann

Victor Khorenko

Christoph Peper

Rosalinda Van Leest

Thorsten Wierzkowski

Wolfgang Koestler

Riteshkumar Bhojani

Jens Kowalsky

Florian Dunzer

Clemens Wächter

Wolfgang Köstler

A stacked multi-junction solar cell comprising a stack composed of a bottom subcell, at least one middle subcell, and a top subcell, wherein each subcell has an emitter and a base at least the top subcell is made of a III-V semiconductor material or includes a III-V semiconductor material, and the emitter of the top subcell includes a superlattice.

Multi-junction solar cell

A stacked monolithic upright metamorphic multijunction solar cell, comprising at least one first subcell having a first band gap, a first lattice constant and being made up of germanium by more than 50%, a second subcell, which is disposed above the first subcell and has a second band gap and a second lattice constant, a metamorphic buffer disposed between the first subcell and the second subcell, including a sequence of at least three layers having lattice constants which increase from layer to layer in the direction of the second subcell, and a first tunnel diode, which is situated between the metamorphic buffer and the second subcell and which has an nlayer and a player, the second band gap being larger than the first band gap, the nlayer of the first tunnel diode comprising InAlP, the player of the first tunnel diode comprising an As-containing III-V material.

Stacked monolithic upright metamorphic multijunction solar cell

A stacked high-blocking III-V semiconductor power diode and manufacturing method, wherein the III-V semiconductor power diode comprises a first highly doped semiconductor contact area, a low-doped semiconductor drift region disposed beneath the first semiconductor contact area, a highly doped second semiconductor contact area disposed beneath the semiconductor drift region, and two terminal contact layers, at least the first semiconductor contact area forms a core stack, the core stack is surrounded by a dielectric frame region along the side face, the upper surface or lower surface of the core stack and the dielectric frame region terminate with each other or form a step with respect to each other, and semiconductor areas of the III-V semiconductor power diode arranged beneath the first semiconductor contact area are each either surrounded by the core stack or form a carrier portion.

Stacked high-blocking InGaAs semiconductor power diode

A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from n-doping to p-doping on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase of an epitaxial gas flow, comprising at least one carrier gas, a first precursor for a first element from main group III and at least one second precursor for a first element from main group V, and fed into the reaction chamber, wherein, when a first growth level is reached, an initial n-doping level is set by means of a ratio, leading to a p-doping, of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow and with the addition of a third mass flow of a third precursor for an n-type dopant to the epitaxial gas flow, subsequently.

Vapor phase epitaxy method

A stacked, monolithic, upright metamorphic, terrestrial concentrator solar cell having exactly five subcells and having a metamorphic buffer, wherein a first subcell has a first lattice constant G1 and consists essentially of germanium, a second subcell has a second lattice constant and GaInAs, a third subcell has the second lattice constant G2 and AlGaInAs, a fourth subcell has the second lattice constant G2 and InP, a fifth subcell has the second lattice constant G2 and InP, G1<G2 applies to the lattice constants, the metamorphic buffer is arranged between the first subcell and the second subcell and has the first lattice constant G1 on a bottom side facing the first subcell and the second lattice constant G2 on a top side facing the second subcell, and all of the semiconductor layers of the concentrator solar cell arranged above the first subcell are epitaxially produced on the preceding subcell.

Stacked, monolithic, upright metamorphic, terrestrial concentrator solar cell

A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, the first initial doping level is then reduced to a second initial doping level of the first or low second conductivity type.

A stacked III-V semiconductor diode comprising or consisting of GaAs, with a heavily n-doped cathode layer, a heavily p-doped anode layer, and a drift region arranged between the cathode layer and the anode layer with a dopant concentration of at most 8&#xb7;10cm, and a layer thickness of at least 10 &#x3bc;m, wherein the cathode layer has a delta layer section with a layer thickness of 0.1 &#x3bc;m to 2 &#x3bc;m and a dopant concentration of at least 1&#xb7;10cm.

Stacked III-V semiconductor diode

A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.

Stacked monolithic multijunction solar cell

A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.

Stacked high barrier III-V power semiconductor diode

A stacked, high-blocking III-V semiconductor power diode having a first metallic terminal contact layer, formed at least in regions, and a highly doped semiconductor contact region of a first conductivity type and a first lattice constant. A drift layer of a second conductivity type and having a first lattice constant is furthermore provided. A semiconductor contact layer of a second conductivity, which includes an upper side and an underside, and a second metallic terminal contact layer are formed, and the second metallic terminal contact layer being integrally connected to the underside of the semiconductor contact layer, and the semiconductor contact layer having a second lattice constant at least on the underside, and the second lattice constant being the lattice constant of InP, and the drift layer and the highly doped semiconductor contact region each comprising an InGaAs compound or being made up of InGaAs.

Stacked, high-blocking InGaAs semiconductor power diode

A solar cell stack includes a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 &#x212b; smaller than the second lattice constant, and a metamorphic buffer. The metamorphic buffer is formed between the first semiconductor solar cell and the second semiconductor solar cell. The metamorphic buffer includes a series of at least five layers. The lattice constant increases in the series in the direction of the semiconductor solar cell. The lattice constants of the layers of the metamorphic buffer are larger than the first lattice constant. Two layers of the buffer having a doping and the difference in the dopant concentration between the two layers being greater than 4Ecm.

Solar cell stack

A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor, then the first initial doping level is reduced to a second initial doping level of the first or low second conductivity type.

A vertical high-blocking III-V bipolar transistor, which includes an emitter, a base and a collector. The emitter has a highly doped emitter semiconductor contact region of a first conductivity type and a first lattice constant. The base has a low-doped base semiconductor region of a second conductivity type and the first lattice constant. The collector has a layered low-doped collector semiconductor region of the first conductivity type with a layer thickness greater than 10 &#x3bc;m and the first lattice constant. The collector has a layered highly doped collector semiconductor contact region of the first conductivity type. A first metallic connecting contact layer is formed in regions being integrally connected to the emitter. A second metallic connecting contact layer is formed in regions being integrally connected to the base. A third metallic connecting contact region is formed at least in regions being arranged beneath the collector.

Vertical high-blocking III-V bipolar transistor

A solar cell stack, having a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, and a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 &#x212b; smaller than the second lattice constant, and a metamorphic buffer, the metamorphic buffer being formed between the first semiconductor solar cell and the second semiconductor solar cell, and the metamorphic buffer including a series of three layers, and the lattice constant increasing in a series in the direction of the semiconductor solar cell, and the lattice constants of the layers of the metamorphic buffer being bigger than the first lattice constant, two layers of the buffer having a doping, and the difference in the dopant concentration between the two layers being greater than 4E17 cm.

Growing community of inventors

Heilbronn, Germany

Daniel Fuhrmann