Finisar Corporation

Rfhic Corporation

Element Six Technologies Limited

Group4 Labs, Inc.

Microsoft Technology Licensing, LLC

Akash Systems, Inc.

Other

Genoa Corporation

Daniel Francis

Felix Ejeckam

Frank Yantis Lowe

Dubravko Ivan Babic

Quentin Diduck

Firooz Nasser-Faili

John Wasserbauer

Ashish K Verma

Richard P Ratowsky

Firooz Faili

Daniel James Twitchen

Jeffrey D Walker

Paul Saunier

Tyrone D Mitchell, Jr

Arnold C Chen

Kris Kong

Wenjun Wu

Dubravko Babić

Peter Weindel Evans

Shi Yan

Sol P Dijaili

David Bruce Young

Roman Dimitrov

Hardik Bati

John P Moore

Christos Koufogiannakis

Jeremy Lwanga

John Wu

Kristopher Matthews

Ted Tomlinson

Daneil James Twitchen

Rashit Nabiev

Sunil Thomas

Chris Decker

Paul Liu

Sergey Zaytsev

Felix Ejeckham

Xiaochuan Zhou

Sarah Yu

Bijal Parikh

Xuan Lu

Jeffrey Wong

Chenhui Zhai

Nikko David Bautista

Firooz Nasser-faili

Joseph Smart

Multi-purpose bracket

Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm&#xb7;having a full width half maximum of no more than 5.0 cm&#xb7;as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.

Wireless communication system with improved thermal performance

Apparatuses, computer readable medium, and methods are disclosed for dynamic sampling based on talent pool size. The method of dynamic sampling based on talent pool size may include determining, by at least one hardware processor, a talent pool based on a query from a user, where the talent pool comprises members and the members comprise attributes. The method further includes determining based on a size of the talent pool a sampling size number, where the attributes are represented by probability distribution functions. The method may further include determining an aggregate distribution of the attributes by combining the sampling size number of samples from each of the attributes and determining a range of a value of the aggregate distribution of the attributes. The method may further include causing the range of the value of the aggregate distribution of the attributes to be displayed to the user.

Dynamic sampling based on talent pool size

Apparatus for efficient high-frequency communications

A multi-purpose, adjustable bracket assembly may be provided. The adjustable bracket may allow for attaching structural features to existing posts, beams, or supports. The adjustable bracket may, for example, facilitate attaching a privacy screen and/or awning to existing railing posts of a deck or balcony. The bracket may further facilitate attachment of decorative latticework, horizontal slats, and/or bamboo partitions.

Multi-purpose adjustable bracket assembly

A method of fabricating a semiconductor device structure includes: providing a substrate comprising a layer of compound semiconductor material; forming a seed layer of nano-crystalline diamond having a layer thickness in a range 5 to 50 nm on the layer of compound semiconductor material; and growing a layer of polycrystalline CVD diamond on the seed layer using a chemical vapour deposition (CVD) technique. An effective thermal boundary resistance (TBR) at an interface between the layer of compound semiconductor material and the layer of polycrystalline CVD diamond material is no more than 50 mK/GW.

Methods for fabricating semiconductor devices that have polycrystalline CVD diamond

Techniques are provided for dynamically generating content. A request for content about a first entity is received from a client device. In response to receiving the request, an identity of a second entity of the client device is determined. Based on the identity, attributes of the second entity are identified. It is determined whether the attributes satisfy targeting criteria of a campaign that was initiated by the first entity. In response to determining that the attributes satisfy the targeting criteria, a first number of entities that (i) share one or more attributes in common with the second entity and (ii) satisfy the targeting criteria is determined. Also, a second number of entities that share the one or more attributes in common with the second entity is determined. A ratio is calculated based on the two numbers. First content that specifies the ratio is sent to the client device for display.

Customizing requested electronic content based on requesting entity information and contextual information

Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

Handle for semiconductor-on-diamond wafers and method of manufacture

Methods of fabricating compound semiconductor device structures having polycrystalline CVD diamond. The method includes: providing a substrate that has a layer of single crystal compound semiconductor material; forming a bonding layer on a surface of the substrate, the bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm; and growing a layer of polycrystalline diamond on the bonding layer using a chemical vapor deposition technique. The effective thermal boundary resistance at the interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 mK/GW. The layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cmVs; and a sheet resistance of no more than 700 &#x3a9;/square.

Method of fabricating compound semiconductor device structures having polycrstalline CVD diamond

Techniques for responding to content requests that originate from remote computing devices are provided. In one technique, a content request that includes a viewer identifier of a user that requested web content and a contextual entity identifier of an entity that is referenced in the web content is received. In response to receiving the content request, based on the viewer identifier, first profile data about a viewer associated with the viewer identifier is retrieved. Also, based on the contextual entity identifier, second profile data about the entity is retrieved. Based on the first profile data and the second profile data, a content delivery campaign is identified. Particular content to deliver is determined based on the content delivery campaign. The particular content is sent to a computing device that initiated the content request.

Contextual entity analysis for electronic content delivery across a computer network

A semiconductor device structure comprising:

Compound semiconductor device structures comprising polycrystalline CVD diamond

A semiconductor device structure includes a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material. The layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm. The effective thermal boundary resistance as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 mK/GW with a variation of no more than 12 mK/GW as measured across the semiconductor device structure. The layer of single crystal compound semiconductor material has one or both of the following characteristics:

A method of fabricating a semiconductor-on-diamond composite substrate, the method comprising: (i) starting with a native semiconductor wafer comprising a native silicon carbide substrate on which a compound semiconductor is disposed; (ii) bonding a silicon carbide carrier substrate to the compound semiconductor; (iii) removing the native silicon carbide substrate; (iv) forming a nucleation layer over the compound semiconductor; (v) growing polycrystalline chemical vapor deposited (CVD) diamond on the nucleation layer to form a composite diamond-compound semiconductor-silicon carbide wafer, and (vi) removing the silicon carbide carrier substrate y laser lift-off to achieve a layered structure comprising the compound semiconductor bonded to the polycrystalline CVD diamond via the nucleation layer, wherein in step (ii) the silicon carbide carrier substrate is bonded to the compound semiconductor via a laser absorption material which absorbs laser light, wherein the laser has a coherence length shorter than a thickness of the silicon carbide carrier substrate.

Method of fabricating diamond-semiconductor composite substrates

Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers () to a carrier () are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

Growing community of inventors

Oakland, CA, United States of America

Daniel Francis