Globalfoundries Inc.

Daniel Fisher

Jinping Liu

Jiehui Shu

Haigou Huang

Luke G England

Zhiguo Sun

Daniel P Smith

Qiang Fang

Haifeng Sheng

Sukeshwar Kannan

Tanya Andreeva Atanasova

One method includes positioning a front side of a first substrate opposite a side of a second substrate, the first substrate comprising an ESD mitigation structure located at an approximate center of the front side, the second substrate comprising at least one TSV structure that extends through the side of the second substrate, the first substrate and the second substrates adapted to be positioned so as to result in the conductive coupling of the at least one TSV structure and the ESD mitigation structure, bending the first substrate to an initial contact position such that an initial engagement between the first substrate and the second substrate will result in conductively coupling between the ESD mitigation structure and the TSV structure, and engaging the first and second substrates with one another such that the ESD mitigation structure and the TSV structure are conductively coupled to one another.

Methods and structures for mitigating ESD during wafer bonding

Methods of lithographic patterning and structures formed by lithographic patterning. A hardmask layer is formed on a dielectric layer, a feature is formed on the hardmask layer, and a mandrel is formed that extends in a first direction across the first feature. The mandrel and the hardmask layer beneath the mandrel are removed to pattern the hardmask layer with the feature masking a section of the hardmask layer. After the hardmask layer is patterned, the dielectric layer is etched to form a first trench and a second trench that are separated by a section of the dielectric layer masked by the section of the hardmask layer. The first trench and the second trench are filled with a conductor layer to respectively form a first wire and a second wire that is separated from the first wire by the section of the dielectric layer.

Self-aligned lithographic patterning with variable spacings

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Clifton Park, NY, United States of America

Daniel Fisher