The University of Texas System

The Ohio State University

Luminex Corporation

Applied Novel Devices, Inc.

Daniel Fine

Mauro Ferrari

Alessandro Grattoni

Xuewu Liu

Sharath Hosali

Leo Mathew

Rajesh A Rao

Vishal P Trivedi

Nicolas Arab

Ross Johnson

Ryan Medema

Arnold Estrada

Lee Hudson

Randy Goodall

Deepak Sharma

Ananth Dodabalapur

Randal Goodall

Xeuwu Liu

A method of fabricating an electronic device can include forming a plurality of vertical channels having sidewalls over a substrate, and forming gate dielectric regions over portions of the vertical channels and planar regions adjoining the vertical channels. Gate electrode regions are then formed over portions of the gate dielectric regions. The gate electrode material and the vertical channel region are doped and sized to enable full depletion of charges during operation. Source and body tie regions are formed on the vertical sidewalls by doping with a p-type or n-type dopant. Dielectric regions over the gate electrode regions are formed to electrically isolate the gate electrode regions from the source regions. A metallic layer is formed over the first side of the substrate having the vertical channels. Stress is then induced within the substrate by annealing and/or cooling to separate a semiconductor region of the substrate and the metallic layer from the remaining portion of the substrate. Drain electrode contacts are formed over the semiconductor region while gate electrode and source electrode contacts are formed by etching portions of a metallic layer formed over the first side of the substrate.

Structures and methods of fabricating electronic devices using separation and charge depletion techniques

Methods and devices for forming droplets are provided. In certain embodiments, the methods and devices form droplets having different diameters. In particular embodiments, the device includes a fluid supply channel, a collection chamber, and one or more nozzles disposed between the fluid supply channel and the collection chamber. Each nozzle may include an inlet portion with a channel height, a first step with a first step height and a first tread length, and a second step with a second step height and a second tread length. In certain embodiments, the first step height is greater than the channel height, and the second step height is greater than the first step height.

Apparatus and methods for multi-step channel emulsification

A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, electrodes and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Nanochanneled device with electrodes and related methods

Methods and devices for forming droplets are provided. In certain embodiments, the methods and devices form droplets having different diameters.

A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Nanochanneled device and related methods

A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.

Method of using a four terminal hybrid silicon/organic field effect sensor device

Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device

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Austin, TX, United States of America

Daniel Fine