Coventor, Inc.

Sensable Technologies, Inc.

Daniel Faken

Kenneth B Greiner

David M Fried

Stephen R Breit

Brandon D Itkowitz

Craig Cook

Mattan Kamon

Vincent M Hammer

Scott Davidson

Brad Amidon

Daniel Sieger

Vincent Baudet

Stéphane Calderon

Systems and methods for multi-material mesh generation from fill-fraction voxel model data are discussed. Voxel representations of model data are used to generate robust and accurate multi-material meshes. More particularly, a mesh generation pipeline in a virtual fabrication environment is described that robustly generates high-quality triangle surface and tetrahedral volume meshes from multi-material fill-fraction voxel data. Multi-material topology is accurately captured while preserving characteristic feature edges of the model.

System and method for multi-material mesh generation from fill-fraction voxel data

A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology measurement data from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

System and method for predictive 3-D virtual fabrication

A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology data generated from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

System and method for performing a multi-etch process using material-specific behavioral parameters in a 3-D virtual fabrication environment

Predictive 3-D virtual fabrication system and method

Improving semiconductor device fabrication by enabling the identification and modeling of pattern dependent effects of fabrication processes is discussed. In one embodiment a local mask is generated from a 3-D model of a semiconductor device structure that was created in a 3-D virtual semiconductor fabrication environment from 2-D design layout data and a fabrication process sequence. The local mask is combined with a global mask based on the original design layout data to create a combined mask. The combined mask is convolved with at least one proximity function to generate a loading map which may be used to modify the behavior of one or more processes in the process sequence. This behavior modification enables the 3-D virtual semiconductor fabrication environment to deliver more accurate 3-D models that better predict the 3-D device structure when performing the virtual semiconductor device fabrication that serves as a prelude to physical fabrication.

Modeling pattern dependent effects for a 3-D virtual semiconductor fabrication environment

A virtual fabrication environment for semiconductor device structure development is discussed that enables the use of a selective epitaxy process to virtually model epitaxial growth of a crystalline material layer. The epitaxial growth occurs on a crystalline substrate surface of a virtually fabricated model device structure. A surface growth rate may be defined over possible 3D surface orientations of the virtually fabricated device structure by modeling the growth rates of the three major families of crystal planes. Growth rates along neighboring non-crystalline material may also be modeled.

System and method for modeling epitaxial growth in a 3-D virtual fabrication environment

A virtual fabrication environment for semiconductor device structure development is discussed. The insertion of a multi-etch process step using material-specific behavioral parameters into a process sequence enables a multi-physics, multi-material etching process to be simulated using a suitable numerical technique. The multi-etch process step accurately and realistically captures a wide range of etch behavior and geometry to provide in a virtual fabrication system a semi-physical approach to modeling multi-material etches based on a small set of input parameters that characterize the etch behavior.

Multi-etch process using material-specific behavioral parameters in 3-D virtual fabrication environment

The invention provides a system for modeling three-dimensional objects using hybrid geometric/volumetric representation, wherein sharp edges are created by a geometric representation that is connected to the volumetric representation. The system creates, maintains, and updates the hybrid representation according to user input. The system also provides for conversion of the hybrid representation into either a wholly geometric representation or a wholly volumetric representation, as may be needed for output to a given device, such as a display device, a printer, and/or a fabricating device.

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Peabody, MA, United States of America

Daniel Faken