Lumileds LLC

Daniel Estrada

Marcel Rene Bohmer

Kentaro Shimizu

Jacobus Johannes Franciscus Gerardus Heuts

Michael David Camras

Jacobus Johannes Francisus Gerardus Heuts

Daniel Bernardo Roitman

Edward Kang

Rene P Helbing

Ken Shimizu

A first LED with a first LED sidewall is disclosed. A second LED with a second LED sidewall facing the first LED sidewall is also disclosed. A first dynamic optical isolation material between the first LED sidewall and the second LED sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first LED sidewall for a light emitted by one of the first LED and the second LED is determined by the optical state, is also disclosed.

LED array with light intensity adaptive LED sidewalls

Described herein is a system and method for tuning light scatter in an optically functional porous layer of an LED. The layer comprises a non-light absorbing material structure having a plurality of sub-micron pores and a polymer matrix. The non-light absorbing material forms either a plurality of micron-sized porous particles dispersed throughout the layer or a mesh slab, wherein a plurality of sub-micron pores is located within each micron-sized porous particle or forms an interconnected network of sub-micron pores within the mesh slab, respectively. A polymer matrix, such as a high refractive index silicone fills the plurality of sub-micron pores creating an interface between the materials. Refractive index differences between the materials allow for light scatter to occur at the interface of the materials. Light scatter can also be decreased as a function of temperature, creating a system for tuning light scatter in both an off state and on state of an LED.

Optical scattering structure having polymer-filled sub-micron pores

A first pixel with a first pixel sidewall is disclosed. A second pixel with a second pixel sidewall facing the first pixel sidewall is also disclosed. A first dynamic optical isolation material between the first pixel sidewall and the second pixel sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first pixel sidewall for a light emitted by one of the first pixel and the second pixel is determined by the optical state, is also disclosed.

Light intensity adaptive LED sidewalls

Method of addressing an LED array with light intensity adaptive LED sidewalls

Devices and techniques are disclosed herein which include a die including side surfaces such that light emitted from the die can exit through the side surfaces. The die includes a first surface and a second surface opposite the first surface such that the distance between the first surface and the second surface is at least 100 micro meters. The die also include a wavelength converting material deposited external to the die such that the wavelength converting material covers the side surfaces. The wavelength converting material includes phosphor particles, a transparent risen carrier, and transparent particles configured to increase the volume of the wavelength converting material, the transparent particles having a refractive index (RI) that is similar to the RI of the transparent risen carrier.

Inert filler to increase wavelength converting material volume and improve color over angle

Light emitting devices (LEDs) are described herein. An LED includes a light emitting semiconductor structure, a wavelength converting material and an off state white material. The light emitting semiconductor structure includes a light-emitting active layer disposed between an n-layer and a p-layer. The wavelength converting material has a first surface adjacent the light emitting semiconductor structure and a second surface opposite the first surface. The off state white material is in direct contact with the second surface of the wavelength converting material and includes multiple core-shell particles disposed in an optically functional material. Each of the core-shell particles includes a core material encased in a polymer or inorganic shell. The core material includes a phase change material.

Light emitting device with phase changing off state white material and methods of manufacture

A system and methods for light-emitting diode (LED) devices with a dimming feature that can tailor a color point shift in the light color temperature of a scattering/transparent layer to enlarge a dim to warm range are disclosed herein. A light-emitting device may include a wavelength converting structure configured to receive light from a light emitting semiconductor structure and an adjacent light scattering structure. The light scattering structure may comprise a plurality of scattering particles with a lower refractive index (RI) than the RI of the matrix material in which the scattering particles are disposed. The wavelength converting structure may include a red phosphor and a green phosphor such that to adjust overlap between green emission and absorption by the red phosphor to correspondingly adjust scattering and magnitude of color shift. In an embodiment, the light scattering structure may be integrated in the wavelength converting structure.

Light-emitting device with light scatter tuning to control color shift

Light emitting devices (LEDs) are described. An LED includes a light emitting semiconductor structure that includes a light emitting active layer disposed between an n-layer and a p-layer. A wavelength converting material may be disposed adjacent the light emitting semiconductor structure. The wavelength converting material includes multiple pores, at least one of which contains a second material. An absolute value of a ratio of a coefficient of thermal expansion of the second material to a coefficient of thermal expansion of the wavelength converting material is at least two in an embodiment, at least ten in another embodiment, at least 100 in another embodiment, and at least 1,000 in yet another embodiment.

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Santa Cruz, CA, United States of America

Daniel Estrada