Cypress Semiconductor Corporation

Daniel Eric Cress

Pidugu L Narayana

Jeffery Scott Hunt

Andrew L Hawkins

Derrick J Savage

Junfei Fan

Ping Wu

Sangeeta Thakur

Muthu Nagarajan

A circuit comprising (i) one or more input paths, (ii) one or more output paths, and (iii) one or more switch circuits. The switch circuits may be configured to connect one or more of said input paths to one or more of said output data in response to one or more control signals. The present invention may be used to read and/or write data in one or more modes of operation such as 9-Bit Big Endian Write, 9-bit Little Endian Write, 18-bit Big Endian Write, 18-bit Little Endian Write, a 36-bit Write, 9-Bit Big Endian Read, 9-bit Little Endian Read, 18-bit Big Endian Read, 18-bit Little Endian Read, 36-bit Read or other mode.

Fifo bus-sizing, bus-matching datapath architecture

An apparatus comprising a native device coupled to an input of an amplifier. The native device is configured to provide a high voltage protection in response to an enable signal.

Low voltage differential amplifier with high voltage protection

An apparatus comprising a memory array having a first port and a one or more other ports and a control circuit configured to couple (i) a bitline of the first port to a corresponding bitline of the one or more other ports and (ii) a dataline of the first port to a corresponding dataline of the one or more other ports in response to the first port and the one or more other ports accessing a common address.

Bitline/dataline short scheme to improve fall-through timing in a multi-port memory

The present invention concerns a circuit comprising a memory, a flag/array address circuit and a flag logic circuit. The memory may be configured to read and write data in response to one or more memory address signals. The flag/array address circuit may be configured to present one or more flag address signals in response to (i) one or more enable signals and (ii) a control signal. The flag logic circuit may be configured to present one or more logic flags in response to the one or more flag address signals.

Flag generation scheme for FIFOs

A memory circuit that allows for short retransmit recovery times by implementing a read cache memory in a FIFO device. A circuit comprising a memory array, a cache memory and a logic circuit. The memory array includes a read pointer, a write pointer and a plurality of memory rows. The cache memory is configured to store one or more memory data bits. The logic circuit is further configured to control the output of the circuit by presenting either (i) an output from the memory array or (ii) an output from the cache memory.

Apparatus and method for shorting retransmit recovery times utilizing cache memory in high speed FIFO

A circuit and method comprising a multiplexer circuit, a select circuit and a buffer circuit. The multiplexer circuit may be configured to present a data bit in response to a first control signal. The select circuit may be configured to generate one or more first outputs in response to (i) the data bit and (ii) one or more first select signals. The buffer circuit may be configured to present one or more second outputs on a data bus in response to (i) the one or more first outputs and (ii) one or more second control signals. One of the second outputs may have a data state and the rest of the second outputs may have a high impedance state. The first and select signals may be generated by a logic circuit.

Column redundancy scheme for bus-matching fifos

A circuit is presented comprising a first device and a second device. The first device may be configured to operate at a first supply voltage and may be configured to generate a pull-up signal in response to an input signal. The second device may be configured to operate at a second supply voltage. The second supply voltage may be lower than the first supply voltage. The second device may be configured to generate an output in response to (i) the input signal and (ii) the pull-up signal.

Input buffer/level shifter

A circuit that may be used as a memory cell that may be capable of a differential write and a single ended read. The circuit generally comprises a memory storage element having a write bitline, a complement write bitline and a read bitline. One or more first gates may be configured to pass data on the write bitline and the inverted write bitline during a write operation. The write operation may occur in response to a write control signal. A second gate may be configured to pass data on from the storage element to the read bitline in response to read control signal. As a result, the circuit may be written by both the write bitline and the complement write bitline and may be read by the read bitline.

Memory cell

A circuit and method for staggering a bitline precharge between particular sections of a memory array. The present invention may be implemented in memories having increasing depths to reduce unacceptably high precharge current requirements associated with high bitline loads. Since the particular memory sections of the memory array are turned on independently, the peak current necessary to charge the particular bitlines is limited. The present invention may be implemented in logic and may therefore be less sensitive to process and temperature variations.

Staggered bitline precharge scheme

The present invention provides a look ahead architecture to satisfy the retransmit recovery time constraints in a mark and retransmit system while allowing a full bitline precharge. A number of sense amplifiers are provided in the look ahead architecture that may be equipped with a 'shadow latch' to store the read data when the mark pointer is asserted. As a result, the data to be retransmitted will be retrieved from the shadow latches when the retransmit is asserted, allowing a full precharge cycle before reading from the memory array.

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Starkville, MS, United States of America

Daniel Eric Cress