Advanced Micro Devices Corporation

Daniel E Sutton

Khoi A Phan

Jeffrey P Erhardt

Martin Mazur

Jerry Cheng

Wolfram Grundke

Richard J Bartlett

Anthony P Coniglio

Carol M Bradway

Terri A Couteau

Christopher Hans Lansford

Bryon K Hance

David Hendrix

Laura Pressley

Michael J Satterfield

Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues from a semiconductor substrate structure in order to reduce resist residue defects therein, including special vapor prime and development operations.

Methods and systems for controlling resist residue defects at gate layer in a semiconductor device manufacturing process

Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues from a semiconductor substrate structure in order to reduce resist residue defects therein. The method may comprise employing an anti reflective coating prior to applying a photo resist coating in a semiconductor manufacturing process. Also disclosed are methodologies for exhausting resist residue during development via a rinsing fluid.

Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.

Method and apparatus for detecting ion implant induced defects

Various methods of inspecting a semiconductor workpiece for defects are provided. In one aspect, a method of inspecting a surface of a semiconductor workpiece for defects is provided that includes applying a negative-tone photoresist film to the surface and baking the negative-tone photoresist film to release solvent therefrom and to facilitate release of catalyzing substances held by the defects into the negative-tone photoresist film. The catalyzing substances react chemically with at least one moiety of the photoresist film to thereby lower the solubility of one or more portions of the negative-tone photoresist film in a developer. The negative-tone photoresist film is developed with the developer and the surface is inspected for the portions of the negative-tone photoresist film remaining after the developing process. The remaining portions of the negative-tone photoresist film are indicative of the locations of the defects.

Method of detecting film defects using chemical exposure of photoresist films

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Austin, TX, United States of America

Daniel E Sutton