Xerox Corporation

Daniel E Kuhman

Frank Jansen

Christopher Constantine

Kevin N Beatty

John Richard Andrews

Howard A Mizes

Gary Alan Kneezel

Robert Paul Herloski

Cathie J Burke

Almon P Fisher

Steven J Grammatica

Herman A Hermanson

Brian T Ormond

Thomas E Orlowski

Alan D Raisanen

Robert V Lorenze, Jr

Zhao-zhi Yu

Lawrence H Herko

David J Collins

Daniel O Roll

Allan F Camp

Ackerman C John

A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gases containing flurocarbons and depositing from the remote plasma onto a front face of a thermal ink jet printhead

Method for remote plasma deposition of fluoropolymer films

A method of forming a semiconductor structure from a first wafer and a second wafer. A pit or groove is formed in a lower surface of the first wafer. The lower surface of the first wafer is bonded to an upper surface of the second wafer. A groove is then formed on an upper surface of the first wafer, such that an opening is formed in the first wafer that exposes at least one alignment reference target on the upper surface of the second wafer. The bonded first wafer and second wafer is then diced using the exposed at least one alignment reference target to form a semiconductor structure.

Methods of forming semiconductor structure

A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gases containing fluorocarbons and depositing from the remote plasma onto a front face of a thermal ink jet printhead.

High density remote plasma deposited fluoropolymer films

A method of cleaning a substrate, in particular, the front face of a thermal ink jet printing device, to improve subsequent thin film deposition in a single chamber plasma processing system containing fluorine-containing deposits, involves treating the substrate with a hydrogen plasma. A front face coating for a thermal ink jet device may be formed by a method involving (1) treating a substrate of the thermal ink jet device with a hydrogen plasma; (2) optionally coating the cleaned substrate with an amorphous carbon layer; and (3) coating the substrate or amorphous carbon layer with a fluoropolymer layer.

Method for improving substrate adhesion in fluoropolymer deposition

An ink jet printhead has improved resistance to the corrosive effects of ink by coating the surface of a photo-imageable polymer with an ink resistant film. In one described embodiment, a thermal ink jet element is formed by bonding together a channel plate and a heater plate. Resistors and electrical connections are formed in the heater plate. A polyimide layer is formed so as to overlie the heater plate to protect the electrical elements while providing pit structure for the heater and for ink flow bypass. A tantalum film is formed on the surface of the polyimide layer to protect the layer from the effects of corrosive ink. In another embodiment, the ink resistant film is amorphous carbon or silicon nitride.

Thermal ink jet printhead with improved ink resistance

A document reproduction machine having an optical component which is coated with a low surface energy transparent coating to reduce the adhesion of particles on the optical component. During the forming of the coating the lateral conductivity of the coating is modified so as to dissipate electrical charge build up on the coating.

Low surface energy coating to maintain clean surfaces of optical

An apparatus and method for bonding wafer pairs. The apparatus includes a heated platen surrounded by a pressurization vessel. The heated platen includes channels connected to a hole which runs through the heated platen. Wafer pairs are placed on the top surface of the platen, a rubber mat is placed over the top of the wafer pairs, and a vacuum is drawn through the hole and the channels. The rubber mat compresses the wafer pairs. The platen is heated for the bonding process. The pressurization chamber is pressurized supplying additional bonding pressure to the wafer pair. Once sufficiently heated, the heated platen is liquid cooled completing the bonding process.

Apparatus for bonding wafer pairs

An apparatus and method for ejecting ink droplets from a plurality of nozzles located in the front face of a printhead controls front face geometries to ensure consistent image quality. A front face dicing angle and a thick film insulative layer etchback are controlled to maintain a Spot Aspect Ratio of each of the droplets ejected from the printhead within a predetermined acceptable range. The Spot Aspect Ratio may be maintained by control of an effective meniscus tilt angle.

Method and apparatus for elimination of misdirected satellite drops in

A bias transfer member including a peripheral surface having low surface energy is disclosed. The low surface energy provides improved cleanability for enhancing the electrostatographic process and increasing the life of the bias transfer member. A low surface energy layer is provided by plasma fluorination to chemically modify the makeup of the surface material or by coating to form a low surface energy layer on the bias transfer member.

Biasable member having low surface energy

A process for minimizing or avoiding drop deflection in ink jet devices which involves coating the ink jet head components with amorphous carbon and subsequently subjecting the amorphous carbon to fluorination in which results in a fluorine surface layer present on the amorphous carbon coating to prevent ink drop deflection.

Coating processes for an ink jet printhead

An electroreceptor comprised of a supporting substrate and hydrogenated amorphous silicon carbide with from about 10 to about 60 atomic percent of carbon, from about 10 to about 60 atomic percent of hydrogen, and from about 10 to about 80 atomic percent of silicon.

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Fairport, NY, United States of America

Daniel E Kuhman