Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Daniel Durini Romero

Bedrich J Hosticka

Werner Brockherde

A time-of-flight 3D imaging system comprising a detector for detecting electromagnetic radiation is constructed so that the detector includes a semiconductor substrate of a first doping type, and a well in the semiconductor substrate, the well being of a second doping type. The first doping type and the second doping type are different and the well has an increasing dopant concentration in a direction parallel to a surface of the semiconductor substrate. In addition, the detector includes a detector terminal doping region which is arranged at least partly in the well in a terminal region of the well. The detection of electromagnetic radiation is based on a generation of free charge carriers by the electromagnetic radiation in a detection region of the well. The detection region has a maximum dopant concentration which is lower than a maximum dopant concentration of the terminal region of the well.

Time-of-flight 3D imaging system comprising a detector for detecting electromagnetic radiation

A detector for detecting electromagnetic radiation includes a semiconductor substrate of a first doping type, and a well in the semiconductor substrate, the well being of a second doping type. The first doping type and the second doping type are different and the well has an increasing dopant concentration in a direction parallel to a surface of the semiconductor substrate. In addition, the detector includes a detector terminal doping region which is arranged at least partly in the well in a terminal region of the well. The detection of electromagnetic radiation is based on a generation of free charge carriers by the electromagnetic radiation in a detection region of the well. The detection region has a maximum dopant concentration which is lower than a maximum dopant concentration of the terminal region of the well.

Detector for detecting electromagnetic radiation having dopant concentration of a well increases monotonically in the direction parallel to the surface of a semiconductor substrate

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Essen, Germany

Daniel Durini Romero