Fairchild Semiconductor Corporation

Alpha Industries

Other

Anadigics, Inc.

Daniel Donoghue

Abid Hussain

Eric Gray

Ian Crossley

Frank Spooner

John Miley

Valter Karavanic

Seth Nash

Duncan Little

Steven Mittleman

Robert Goldwasser

Robert Goldswasser

An RF coupler implementable as an integrated circuit includes a first transmission line having a first line portion and a second line portion. A first end of the first transmission line is coupled to an input port for receiving an RF input signal. A second end of the first transmission line is coupled to an output port for providing an RF output signal. The RF coupler further includes a second transmission line formed between the first line portion and the second line portion such that magnetic field produced due to the RF input signal in the first line portion and the second line portion envelops the second transmission line. A first end of the second transmission line is configured as a coupled port for providing a coupled RF signal, and a second end of the second transmission line is coupled to a termination element to form an isolation port.

Radio frequency (RF) couplers

A coupler includes a substrate and a stack of first and second dielectric layers extending over a top surface of the substrate. The first dielectric layer comprises different dielectric material than the second dielectric layer. Two conductive lines extend over the stack of first and second dielectric layers, and are formed in the same plane parallel to a surface of the substrate.

High directivity ultra-compact coupler

A system with an RFin terminal and an RFout terminal includes an output matching network. The system further includes a coupler having a thru arm connected between the output matching network and the RFout terminal, and a coupled arm connected to a detector circuit. The coupler further includes a stack of first and second dielectric materials having different dielectric constants. The stack of first and second dielectric materials extends over a top surface of a substrate. The thru arm and the coupled arm extend over the stack of first and second dielectric materials in the same plane parallel to a surface of the substrate.

System including a high directivity ultra-compact coupler

A voltage controlled oscillator includes a VCO chip that is a monolithic circuit with a Gunn diode and varactor diode intercoupled by a resonant circuit. A detector/discriminator/power divider chip is coupled to the VCO chip through a directional coupler and is a monolithic circuit having a pair of discriminator diodes and amplitude detector diode on a semi-insulating substrate with associated circuit components. Connected-together electrodes of the discriminator diodes are connected to one output of the power divider. An electrode of the amplitude detector diode is connected to the other output of the power divider. Stagger-tuned resonant circuits are coupled to the other electrodes of the discriminator diodes. Conducting portions forming low pass filters couple the amplitude detector diode and the discriminator detector diodes to respective outputs. The outputs of the discriminator and amplitude detector are coupled to respective inputs of an analog divider that provides a ratio signal that is coupled to the - input of a differential amplifier. The + input of the differential amplifier receives a frequency designating potential. The output of the differential amplifier is coupled to the varactor diode.

Controlling oscillator

A hybrid ring mixer includes an annular conducting ring on a gallium arsenide substrate coated on the bottom with a conducting layer to comprise a strip transmission line. Three conductors spaced by 120.degree. extend radially outward from the annular ring to define local oscillator, signal input and i-f ports, respectively. A pair of conductors spaced by substantially 120.degree. extend radially inward to comprise diode ports. A conducting surface inside the annular ring is grounded and has circular sectors of different radius bounded by radii extending from the center of the ring and bisecting the signal and local oscillator ports, respectively. The sector of larger radius is located in the 120.degree. sector between the signal and local oscillator ports. Mesa diodes are connected between each of the diode ports and the sector of smaller radius. A via opening surrounded by a conducting layer extends between the bottom and top of the substrate to establish conducting contact between the bottom conducting layer and the grounded conducting surface. The circuit is formed by diffusing n+ and n epitaxial layers into the substrate, etching through the end layer and depositing a cathode ohmic contact on the n+ layer, establishing an anode contact on the n layer, metalizing the substrate upper surface to form the circuit, etching through the bottom of the substrate to form the via opening and plating the back side of the substrate and the region around the via opening.

Ring hybrid mixing

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Tewksbury, MA, United States of America

Daniel Donoghue