Lsi Corporation

Daniel Deisz

Danny C Vogel

A semiconductor platform for implementing multiple-frequency operations includes multiple physical resources comprising embedded functions and a configurable transistor fabric. The transistor fabric includes at least first and second portions, the first portion being programmable to instantiate a first function having higher frequency operations than the second portion. The platform further includes multiple logical resources corresponding to the physical resources of the semiconductor platform and a configurable power mesh to support multiple frequency operations configurable from the transistor fabric. The power mesh includes at least first and second configurable grids. The first configurable grid is operable at a different frequency than the second configurable grid. The power mesh is modifiable, as a function of a desired performance of a customer's requirements, in a vicinity of the first portion of the configurable transistor fabric to support the first function having higher frequency operations.

Power mesh for multiple frequency operation of semiconductor products

The design of integrated circuits, i.e., semiconductor products, is made easier with a semiconductor platform having versatile power mesh that is capable of supporting simultaneous operations having different frequencies on the semiconductor product; e.g., higher frequency operations may be embedded as diffused blocks within the lower layers or may be programmed from a configurable transistor fabric above the diffused layers. Preferably the power mesh is located above the layers having the operations requiring the different frequencies, and may be fixed in an application set given to a chip designer or may be configurable by the designer her/himself. For example, to support high speed communications adjacent an embedded high speed data transceiver, the transistor fabric may be programmed as a data link layer having higher performance requirements than the rest of the integrated circuit. The data link layer may be connected to one of the localized grids of the versatile power mesh which may have an increased density and/or wider strap width of a power/ground grid. Additional decoupling capacitance can be embedded in the lower layers of the semiconductor product and/or can be programmed from the configurable transistors fabric.

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McLean, VA, United States of America

Daniel Deisz