USA As Represented by Secretary of the Navy

Sandia Corporation

Daniel D Koleske

Mark E Twigg

Richard L Henry

Alma E Wickenden

Charles R Eddy, Jr

Martin C Peckerar

Mary H Crawford

Ronald T Holm

Martin F Schubert

Qiming Li

Jonathan J Wierer, Jr

Andrew A Allerman

E Fred Schubert

George T Wang

Mohammad Fatemi

Jaehee Cho

Stephen R Lee

Ahmed Noemaun

Di Zhu

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Amber light-emitting diode comprising a group III-nitride nanowire active region

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

High efficiency III-nitride light-emitting diodes

A denticulated Group III nitride structure that is useful for growing AlGaN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.

Electronic devices grown on off-axis sapphire substrate

Growing community of inventors

Fairfax Station, VA, United States of America

Daniel D Koleske