The Boeing Company

Theboeing Company

Daniel C Law

Christopher M Fetzer

Richard Roland King

Xing-Quan Liu

Joseph Charles Boisvert

Nasser H Karam

Eric Rehder

Dimitri Daniel Krut

Kenneth M Edmondson

Dhananjay M Bhusari

William D Hong

Philip T Chiu

Dale H Waterman

Andreea Boca

Tom Crocker

Scott B Singer

Xiaobo Zhang

Robyn L Woo

Shoghig Mesropian

Dale Waterman

Nassar H Karam

Liu Xing-Quan

Eric Michael Rehder

A solar cell for a solar cell array with one or more grid on a surface thereof, wherein electrical connections are made to the grids in a plurality of locations positioned around the solar cell; and the electrical connections extend to one or more conductors located under the solar cell. The conductors located under the solar cell are buried within a substrate, and each of the conductors comprises a low resistance conducting path that distributes current from the solar cell. The conductors are loops, U-shaped, or have only up or down pathways. The solar cell comprises a full cell that has four cropped corners and the locations are in the cropped corners.

Solar cells for a solar cell array

In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell.

Solar cell structures for improved current generation and collection

Photovoltaic (PV) cell structures are disclosed. In one example embodiment, a PV cell includes an emitter layer, a base layer adjacent to the emitter layer, and a back surface field (BSF) layer adjacent to the base layer. The BSF layer includes a first layer, and a second layer adjacent to the first layer. The first layer includes a first material and the second layer includes a second material different than the first material.

Multi-layer back surface field layer in a solar cell structure

A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.

Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells

A solar cell structure including a solar cell having a front surface and a back surface, a reflective layer disposed proximate the back surface and a flexible support layer disposed between the back surface and the reflective layer.

Solar cell structure with back surface reflector

A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.

Solar cell structure and composition and method for forming the same

A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.

Solar cell with delta doping layer

In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising AlGaInAs and a second portion comprising GaInP. The first portion is adjacent the first semiconductor layer and the second portion is adjacent the second semiconductor layer.

Optoelectric devices comprising hybrid metamorphic buffer layers

The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (Al)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance.

Direct wafer bonding

Technologies for a process used to reduce the height of a raised profile of a device. One or more raised profiles on one or more layers of a device are removed using a combined chemical-mechanical polishing/etching process. In some implementations, a protective layer is applied to a top layer of a device grown on a substrate. A combined chemical-mechanical polishing/etching process may commence whereby one or more raised profiles of the protective layer are removed through a planarization process, exposing at least a portion of a raised profile of a layer below the protective layer. Material may be removed using an etchant to reduce the height of the raised profile.

Growing community of inventors

Arcadia, CA, United States of America

Daniel C Law