Glo Ab

University of California

Japan Science and Technology Agency

Sofie Biosciences, Inc.

Lemay, Cynthia

Herner, Scott Brad

Thompson, Daniel Bryce

Daniel Bryce Thompson

Martin F Schubert

Steven P DenBaars

Nathan Fredrick Gardner

Shuji Nakamura

Scott Brad Herner

Jacob J Richardson

Frederick F Lange

Cynthia Lemay

Michael Jason Grundmann

Fariba Danesh

Ingrid Koslow

Umesh Kumar Mishra

Linda T Romano

Anusha Pokhriyal

Lee McCarthy

Akihiko Murai

Miljenko Modric

Jun Seok Ha

Christina Ye Chen

Fredrick A Kish, Jr

Ronald T Kaneshiro

R Michael Van Dam

Sharon N Farrens

Melissa Moore

Brandon Maraglia

Jin Hyeok Kim

Jun-Seok Ha

Jr Fredrick A Kish

A pixelated display device and a method for making the same are disclosed. The device may include an array of nanowire LEDs located above a substrate. When the nanowire LEDs are initially grown, they may emit first-wavelength light proximally to the substrate and second-wavelength light distally from the substrate. The nanowires may remain as initially grown, in which case only second-wavelength light is visible, or the second-wavelength light emitting portions may be etched away such that only first-wavelength light is visible.

Pixilated display device based upon nanowire LEDs and method for making the same

A self-shielded, bench-top radiochemistry system, including a radioactive isotope dispensing module configured to draw an isotope out of a vial and dispense one or more metered doses of the isotope to a concentration module that concentrates the metered dose into a droplet amount of isotope and a synthesizer module that delivers the droplet amount of isotope along with one or more reagents to an electrowetting on dielectrics (EWOD) chip to produce a radiolabeled molecule.

Self-shielded, benchtop radio chemistry system with a plurality shielded carriers containing a disposable chip cassette

A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate. Additional devices on each additional transfer substrate can be bonded to additional conductive bonding structures on the backplane employing the same method provided that the additional devices are not present in positions that would overlap with pre-existing first light emitting devices or devices on the backplane at a bonding position.

Method of making a light emitting diode array on a backplane

A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices comprising remaining portions of the device layer are laterally isolated from one another by the channels. The transfer substrate can be bonded to a target substrate through an adhesion layer. Surface portions of the devices can be removed from an interface region between the transfer substrate and the devices by irradiating a laser beam through the transfer substrate onto the devices. The laser irradiation decomposes the III-V compound semiconductor material. The channels provide escape paths for the gaseous products (such as nitrogen gas) that are generated by the laser irradiation. The transfer substrate is separated from a bonded assembly including the target substrate and remaining portions of the devices. The devices can include a III-V compound semiconductor material.

Laser lift-off on isolated III-nitride light islands for inter-substrate LED transfer

A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second hand gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Monolithic image chip for near-to-eye display

Light emitting diode array on a backplane and method of making thereof

Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200&#xb0; C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.

Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs

A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90&#xb0; when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance.

Nanowire sized opto-electronic structure and method for modifying selected portions of same

Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.

Removal of 3D semiconductor structures by dry etching

A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.

Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution

A method of dicing semiconductor devices includes depositing a continuous first layer over the substrate, such that the first layer imparts a compressive stress to the substrate, and etching grooves in the first layer to increase local stress at the grooves compared to stress at the remainder of the first layer located over the substrate. The method also includes generating a pattern of defects in the substrate with a laser beam, such that a location of the defects in the pattern of defects substantially corresponds to a location of at least some of the grooves in the in the first layer, and applying pressure to the substrate to dice the substrate along the grooves.

Method of stress induced cleaving of semiconductor devices

Growing community of inventors

Walnut Creek, CA, United States of America

Daniel Bryce Thompson