Aixtron Se

Daniel Brien

Marcel Kollberg

Walter Franken

Oliver Schön

Roland Püsche

A CVD reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. The thickness of the flat component is substantially less than a diameter of the flat component. The flat component includes a core body composed of graphite. The core body is coated with a SiC or TaC coating, which exhibits a compressive stress at room temperature. In order to reduce the stress between the coating and the core body, the rounding arc length of the outer edge is greater than 90&#xb0; and the rounding radius of the outer edge is at most 1 mm and/or is greater than the coating thickness. Additionally, rounding segments of the peripheral side transition into each other without kinks.

Coated flat component in a CVD reactor

A heating apparatus includes a plurality of zone heating apparatuses and a control apparatus. The reference variable of the control apparatus is a susceptor temperature. The controlled variable of the control apparatus is an actual temperature of the susceptor measured by a temperature sensor and the manipulated variable of the control apparatus is the total heating power fed into the heating apparatus. A heating power distributor receives the total heating power as an input variable and provides a zone heating power for each of the zone heating apparatuses as output variables. The sum of the zone heating powers corresponds to the total heating power and the zone heating powers have a specified ratio with respect to each other. In order to specify a robust control loop, the specified ratios are defined by distribution parameters, wherein at least one distribution parameter is a quotient of two zone heating powers.

Substrate treatment device

The invention relates to a device for depositing semiconductor layers, comprising a process chamber () arranged substantially rotationally symmetrically about a center (), a susceptor (), a process chamber ceiling (), a gas inlet element () having gas inlet chambers () that are arranged vertically on top of each other, and a heater () arranged below the susceptor (), wherein the topmost () of the gas inlet chambers is directly adjacent to the process chamber ceiling () and is connected to a feed line () for feeding a hydride together with a carrier gas into the process chamber (), wherein the lowest () of the gas inlet chambers is directly adjacent to the susceptor () and is connected to a feed line () for feeding a hydride together with a carrier gas into the process chamber (), wherein at least one center gas inlet chamber () arranged between the lowest () and the topmost () gas inlet chamber is connected to a feed line () for feeding an organometallic compound into the process chamber (). According to the invention, the gas inlet chambers () are closed off toward the process chamber () by annular walls (), wherein the annular walls () comprise a plurality a gas outlet openings () arranged closely next to each other, have a uniform outside diameter, and an outer wall that is substantially without projections and directed toward the process chamber ().

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Aachen, Germany

Daniel Brien