Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Other

Albert-ludwigs-universitat Freiburg

Centrotherm Photovoltaics Ag

Daniel Biro

Stefan Reber

Oliver Schultz-Wittmann

Andreas Wolf

Ralf Preu

Florian Clement

Ulrich Jager

Jochen Rentsch

Sebastian Mack

Benjamin Thaidigsmann

Daniel Kray

Harald Wanka

Andreas Grohe

Ansgar Mette

Gernot Wandel

Jan-Frederik Nekarda

Filip Granek

Kuno Mayer

Maximilian Pospischil

Reinhard Lenz

Daniel Scheffler

Peter V&ouml;lk

Philip Rothhardt

Jörg Koriath

Catherine Voyer

Sebastian Meier

Edgar-Allan Wotke

Robert Woehl

Sabrina Lohmüller

Marc Hofmann

Eva Zimmer

Jan Specht

Johannes Seiffe

Anne-Kristin Volk

Mark Schumann

Gero Kastner

Teresa Orellana Peres

Martin Zimmer

Elias Kirchgässner

Arpad Mihai Rostas

Martin Kuchler

Markus Klawitter

Harald Gentischer

Thomas Stoffels

Ulrich JÄGER

Gero KÄSTNER

Sybille Hopman

The invention relates to a method for doping semiconductor substrates by means of a co-diffusion process. First, semiconductor substrates are coated at least on one side with a layer containing at least one first dopant. Two of said substrates in each case are arranged in a process chamber in such a way that two of the coated sides thereof are brought in direct contact.

Method for doping semiconductor substrates by means of a co-diffusion process and doped semiconductor substrate produced by means of said method

The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.

Photovoltaic solar cell and method for producing a photovoltaic solar cell

A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front () of a semiconductor substrate; B. generating a selective emitter doping on the front () of the semiconductor substrate by generating on the front () a first low-doped region () and a local high-doped region () within the first low-doped region; and C. applying at least one metal emitter contact structure to the front () of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer () is generated in a method step Bsimultaneously on the front and back of the semiconductor substrate via thermal oxidation.

Method for producing a photovoltaic solar cell

A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer () to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer () and a melting region of the semiconductor substrate lying under the doping layer () in such a way that dopant diffuses from the doping layer () into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region () is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer () and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell

A method for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell, wherein, in order to create the contact structure, a paste, which contains metal particles, is applied to a surface of a carrier substrate via at least one dispensing opening, wherein the dispensing opening and the carrier substrate are moved in relation to one another during the dispensing of the paste. The paste is circulated in a circulating region, and in each case a part of the paste is branched off out of the circulating region at a plurality of branching points and each branching point is assigned at least one dispensing opening, via which the paste branched off at the branching point is applied to the surface of the carrier substrate, wherein the paste flows through a flow path having a length of less than 1 cm in each case between being branched off out of the circulating region and being dispensed from the dispensing opening assigned to the branching point. A device for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell is also provided.

Method and device for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell

A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

Texturing and cleaning agent for the surface treatment of wafers and use thereof

A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

Method for local contacting and local doping of a semiconductor layer

A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween. By global heating the semiconductor substrate the first paste penetrates the insulating layer and forms an electrically conductive contact directly with the semiconductor substrate, whereas the second paste does not penetrate the insulating layer and is electrically conductively connected to the semiconductor substrate via the first paste.

Method for producing a metal contact structure of a photovoltaic solar cell

A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.

Mixture for doping semiconductors

A transport device for transporting to-be-processed elements through a high-temperature zone and a corresponding method is described. The transport device operates according to the walking beam principle, with thin, elongated carrier elements made of a flexible material, which are maintained under tensile stress along the longitudinal axis of the carrier elements, being provided instead of conventional walking beams. The device permits low contamination transport of the elements through a high-temperature zone and improved utilization of energy as well as the ability to use a RTP process.

Transport device and method of transporting to-be-processed elements through a high-temperature zone

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Freiburg, Germany

Daniel Biro