Apple Inc.

Other

Daniel Arthur Haeger

Kelly C McGroddy

David P Bour

Dmitry S Sizov

Arpan Chakraborty

Jean-Jacques P Drolet

James Michael Perkins

Andreas Bibl

Hsin-Hua Hu

Clayton Ka Tsun Chan

Xiaobin Xin

Kelly Mcgroddy

Dimitry S Sizov

Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

LED with internally confined current injection area

LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.

LED sidewall processing to mitigate non-radiative recombination

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

LED structures for reduced non-radiative sidewall recombination

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Fremont, CA, United States of America

Daniel Arthur Haeger