Lam Research Corporation

Daniel Arthur Brown

Ian J Kenworthy

Michael C Kellogg

James E Tappan

Jerrel Kent Antolik

Dean Jay Larson

John Patrick Holland

Zhigang Chen

Leonard John Sharpless

Darrell Ehrlich

Allan Kent Ronne

Theo Panagopoulos

Keith Laurence Comendant

Saurabh J Ullal

Victor Wang

Jason Lee Treadwell

Paul Albert Avanzino

Christopher William Burkhart

Jeff A Bogart

Jeffrey A Bogart

Jolie L Brown

A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

Plasma processing devices having multi-port valve assemblies

Semiconductor processing tools are provided that include a support framework, semiconductor processing chambers arranged along an axis, an attachment point connected to the support framework, and a detachable hoist system. Each chamber includes a base portion fixedly mounted relative to the support framework and a removable top cover including one or more hoisting features. The detachable hoist system includes a vertical member including a top end including a complementary attachment point and a bottom end including a movement mechanism supported by a floor. The complementary attachment point is detachably connected to the attachment point. The detachable hoist system further includes a hoist arm connected to the vertical member. The hoist arm is configured to pivot about a vertical axis substantially perpendicular to the axis, and includes one or more links and a hoist feature engagement interface configured to engage with the hoisting features of any of the removable top covers.

Integrated tool lift

Semiconductor processing tools are provided that include an upper support framework, a plurality of semiconductor processing chambers arranged along a first axis, a linear guide system fixedly supported by the upper support framework and extending along a second axis substantially parallel to the first axis, and a carriage. Each chamber has a base portion fixedly mounted relative to the upper support framework and a removable top cover with one or more hoisting features. The carriage includes a hoist arm configured to pivot about a vertical axis that is substantially perpendicular to the second axis, the carriage is configured to movably engage with the linear guide system and translate along the second axis relative to the linear guide system. The carriage and hoist arm are movable such that a hoist feature engagement interface of the hoist arm can be moved engage with hoisting features of any of the removable top covers.

A substrate processing tool includes a plurality of process modules configured to process a semiconductor substrate. Each of the plurality of process modules is arranged at a different location within the substrate processing tool. A vacuum transfer module (VTM) includes a robot and is configured to move between a plurality of different positions corresponding to the different locations within the substrate processing tool to allow the robot to access respective ones of the plurality of process modules.

Moving substrate transfer chamber

A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

Chamber with vertical support stem for symmetric conductance and RF delivery

A compression member for use in a showerhead electrode assembly of a capacitively coupled plasma chamber. The member applies a compression force to a portion of a film heater adjacent a power supply boot on an upper surface of a thermal control plate and is located between the thermal control plate and a temperature-controlled top plate. The member is composed of an electrically insulating elastomeric material which can work over a large range of compressions and temperatures.

Compression member for use in showerhead electrode assembly

An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.

Replaceable upper chamber parts of plasma processing apparatus

An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.

Quartz guard ring centering features

A plasma processing chamber, which includes an upper electrode assembly, a lower electrode assembly, and a plasma confinement assembly. The upper electrode assembly includes an upper electrode, a backing member, the backing member attachable to an upper surface of the upper electrode, and a guard ring surrounding an outer surface of the backing member and located above the upper surface of the upper electrode, wherein the guard ring is configured to provide an inner gap between the outer surface of the backing member and an inner periphery of the guard ring. The lower electrode assembly is adapted to receive a semiconductor substrate. The plasma confinement assembly is separated from an outer periphery of the upper electrode and the backing member by the guard ring.

Growing community of inventors

Brentwood, CA, United States of America

Daniel Arthur Brown