Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Daniel Alvarado

Daniel R Tieger

Graham Wright

Klaus Becker

Shreyansh P Patel

Craig Richard Chaney

William R Bogiages, Jr

Brian S Gori

Benjamin Oswald

Alexander S Perel

Robert C Lindberg

Eric D Wilson

George Gammel

Zhiyong Zhao

Stephen Krause

Michael St Peter

Jack J Bisson

Craig Walker

Jacob Mullin

Carlos M Goulart

David Ackerman

An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

Temperature control for insertable target holder for solid dopant materials

A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.

Crucible design for liquid metal in an ion source

A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to generate the desired extracted beam current or the desired current from the arc voltage power supply. Based on the measured bias power, the system may determine whether the cathode is becoming too thin, and may take a corrective action. This corrective action may be to alert the operator; to operate the IHC ion source using a predetermined set of parameters; or to change the dilution used within the IHC source. By performing these actions, the life of the cathode may be more than doubled.

Extended cathode and repeller life by active management of halogen cycle

An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a pocket or cavity into which the solid dopant material is disposed. When the solid dopant material melts, it remains contained within the pocket, thus not damaging or degrading the arc chamber. Additionally, the target holder can be moved from one or more positions where the pocket is at least partially in the arc chamber to one or more positions where the pocket is entirely outside the arc chamber. In certain embodiments, a sleeve may be used to cover at least a portion of the open top of the pocket.

Insertable target holder for solid dopant materials

An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder has a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. The porous surface may be a portion of a perforated crucible, a portion of a perforated retention cap, or a porous insert.

Insertable target holder for improved stability and performance for solid dopant materials

An IHC ion source with multiple configurations is disclosed. For example, an IHC ion source comprises a chamber, having at least one electrically conductive wall, and a cathode and a repeller disposed on opposite ends of the chamber. Electrodes are disposed on one or more walls of the ion source. Bias voltages are applied to at least one of the cathode, repeller and the electrodes, relative to the electrically conductive wall of the chamber. Further, the IHC ion source comprises a configuration circuit, which receives the various voltages as input voltages, and provides selected output voltages to the cathode, repeller and electrodes, based on user input. In this way, the IHC ion source can be readily reconfigured for different applications without rewiring the power supplies, as is currently done. This configuration circuit may be utilized with other types of ion sources as well.

Ion source with multiple configurations

An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.

Ion source crucible for solid feed materials

An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

Ion source for enhanced ionization

An indirectly heated cathode (IHC) ion source having improved life is disclosed. The IHC ion source comprises a chamber having a cathode and a repeller on opposite ends of the ion source. Biased electrodes are disposed on one or more sides of the ion source. The bias voltage applied to at least one of the cathode, the repeller and the electrodes, relative to the chamber, is varied over time. In certain embodiments, the voltage applied to the electrodes may begin at an initial positive voltage. Over time, this voltage may be reduced, while still maintaining the target ion beam current. Advantageously, the life of the cathode is improved using this technique.

Ion source for multiple charged species

An apparatus that forms a source bushing, while comprehending the possible formation of electrically conductive films thereon, is disclosed. Such an apparatus may advantageously be used to isolate an ion source from other components within the ion implanter, as these components may be at different electrical potentials. In one embodiment, the source bushing is constructed from a material having a lower electrical resistance than is currently used. By constructing the bushing in this manner, the effects of the applied lower resistance films is reduced, as the change in effective resistance is reduced. In other embodiments, the source bushing is purposely lined with an electrically semiconducting material, so that the effects of the later applied lining are minimized. In either case, the electrical potential between the two devices that are being isolated by the bushing is more evenly applied across the bushing.

Conductive contamination resistant insulator

A Faraday system for measuring ion beam current in an ion implanter or other ion beam treatment system includes a Faraday cup body defining a chamber which has an entrance aperture for receiving an ion beam, a suppression electrode positioned in proximity to the entrance aperture to produce electric fields for inhibiting escape of electrons from the chamber, and a magnet assembly positioned to produce magnetic fields for inhibiting escape of electrons from the chamber. The chamber may have a relatively small ratio of chamber depth to entrance aperture width.

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Methuen, MA, United States of America

Daniel Alvarado