Stmicroelectronics(tours) Sas

Université François Rabelais

Centre National De La Recherche Scientifique

Universite De Tours

Stmicroelectronics (rousset) Sas

Daniel Alquier

Sophie Ngo

Edgard Jeanne

Arnaud Florence

Jean François Michaud

Dominique Certon

Rami Khazaka

Marc Portail

A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.

Process for fabricating a micromechanical structure made of silicon carbide including at least one cavity

An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

Acoustic galvanic isolation device

A data transmission device includes a coder configured to code the data into a multifrequency signal. A first array of ultrasonic transducers with a vibrating membrane is disposed on a first surface of a wafer. The first array configured to convert the signal into a multifrequency acoustic signal propagating in the wafer. A second array of ultrasonic transducers is disposed on a second surface of the wafer. The second array includes at least two assemblies of vibrating membrane ultrasonic transducers having resonance frequencies equal to two different frequencies of the multifrequency signal.

Galvanically-isolated data transmission device

An electroacoustic transducer including a first electrode formed on a substrate capable of transmitting ultrasounds, a membrane formed above the first electrode and separated therefrom by a cavity, a second electrode formed on the membrane, a first insulating layer on the second electrode, and a third electrode formed on the first insulating layer.

Growing community of inventors

Tours, France

Daniel Alquier