Infineon Technologies Ag

Danial Tayari

Winfried Bakalski

Valentyn Solomko

Andrea Cattaneo

Semen Syroiezhin

Andreas Wickmann

Jochen Essel

Oguzhan Oezdamar

Johannes Klaus Rimmelspacher

Pablo Araujo Do Nascimento

Hans Taddiken

Anton Steltenpohl

Bernd Schleicher

A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

RF switch with compensation

In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

System and method for biasing an RF switch

Growing community of inventors

Unterhaching, Germany

Danial Tayari