Innoscience (Suzhou) Technology Co., Ltd.

Danfeng Mao

King Yuen Wong

Jianjian Sheng

Jinhan Zhang

Xiaoyan Zhang

Wei Wang

The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor, a first conductive terminal and a second conductive terminal disposed on a second region of the second nitride semiconductor layer, and a resistor formed in the first nitride semiconductor layer and electrically connected between the first conductive terminal and the second conductive terminal, wherein the resistor comprises at least one conductive region.

Semiconductor device and manufacturing method thereof

The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a passivation layer covering the first gate conductor, and a second gate conductor disposed on the passivation layer and on a second region of the second nitride semiconductor layer, wherein the first region is laterally spaced apart from the second region.

The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor; and a capacitor having a first conductive layer and a second conductive layer and disposed on a second region of the second nitride semiconductor layer. Wherein the first conductive layer of the capacitor and the first source electrode have a first material, and the second conductive layer of the capacitor and the first field plate have a second material.

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Zhuhai, China

Danfeng Mao