Lockheed Martin Corporation

Qorvo US, Inc.

Dana Jay Sturzebecher

David R Helms

John Ditri

Soack Dae Yoon

Patrick Courtney

Stuart R Ducker

Andrew Arthur Ketterson

Larry Charles Witkowski

Thomas Patrick Higgins

Arthur Donald Ballato

Spatial power-combining devices with reduced dimensions are disclosed. Spatial power-combining devices are provided that employ a hybrid structure including both a planar splitter/combiner and an antipodal antenna array. Planar splitters may be arranged to divide an input signal while antipodal antenna arrays may be arranged to combine amplified signals. In other applications, the order may be reversed such that antipodal antenna arrays are arranged to divide an input signal while a planar combiner is arranged to combine amplified signals. Advantages of such spatial power-combining devices include reduced size and weight while maintaining suitable performance for operation in desired frequency bands.

Spatial power-combining devices with reduced size

A BAW device includes a substrate, a first reflector, and at least two BAW transducers. The first reflector resides over the substrate and has a plurality of reflector layers. A first BAW transducer resides over a first section of the first reflector, has a first series resonance frequency, and has a first piezoelectric layer of a first thickness between a first top electrode and a first bottom electrode. The second BAW transducer resides over a second section of the first reflector, has a second series resonance frequency that is different than the first series resonance frequency, and has a second piezoelectric layer of a second thickness, which is different than the first thickness, between a second top electrode and a second bottom electrode.

BAW structure having multiple BAW transducers over a common reflector, which has reflector layers of varying thicknesses

An integrated circuit amplifier comprises: a first planar substrate having an upper surface and a lower surface; a second planar substrate having an upper surface and a lower surface, the lower surface of the second planar substrate physically affixed to the upper surface of the first planar substrate; at least one transistor pair comprising a first and second transistor, formed in the upper surface of the second planar substrate; and a conductor electrically coupling a drain electrode of the first transistor to a source electrode of the second transistor. The first substrate material may have a higher thermal conductivity than the second substrate material. The first material may be Silicon Carbide and may have a thickness of about 10 mils. The second material may be Gallium Arsenide and may have a thickness of about 1 to 2 mils.

Integrated-circuit amplifier with low temperature rise

A radio frequency (RF) power limiter including a signal conductor having an input end and an output end and first and second limiter stages. The first limiter stage comprises a plurality of stacked diode strings arranged in anti-parallel with respect to the signal conductor. The second limiter stage comprises a second plurality of stacked diode strings arranged in anti-parallel with respect to the signal conductor. An all pass filter is arranged between the first and second limiter stages.

Wide bandwidth RF power limiter

An integrated circuit comprises a GaAs substrate thermally and mechanically mounted on a SiC substrate. The GaAs substrate is doped to define first and second transistors. Circuit conductors are defined on the GaAs substrate, which conductors interconnect the source of the first transistor to neutral and the drain to the source of the second transistor. Conductors connect the gate of the second transistor to neutral, to define a cascode amplifier. The SiC substrate supports first and second matching circuits, one of which is connected to the gate of the first transistor, and the other of which is connected to the drain of the second transistor.

A power splitter/divider may be used with a paralleled amplifier. The power splitter/divider includes a common port and a distribution structure for distributing equal-amplitude samples of the applied signal from the common port to four cascades of artificial transmission lines. The impedances of the sections of artificial transmission line are stepped, in order to provide an impedance transformation between the individual ports and the impedance presented to the common port. When there are four cascades, each presents an impedance of 200 ohms to the common port, for operation in a 50-ohm system. Each artificial transmission line of each cascade includes at least two planar, spirally disposed elongated conductors, spaced to provide mutual coupling between turns. In at least some of the artificial transmission lines, discrete capacitors aid in forming pi sections of transmission line.

Growing community of inventors

Cary, NC, United States of America

Dana Jay Sturzebecher