Hrl Laboratories, LLC

Dana C Wheeler

Tahir Hussain

James Chingwei Li

Hasan Sharifi

Keisuke Shinohara

Pamela R Patterson

Wonill Ha

James H Schaffner

Peter David Brewer

Hyok Jae Song

Joseph S Colburn

Kyung-Ah Son

Yakov Royter

Harris P Moyer

Eason F Wang

A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

Monolithic integration of GaN and InP components

The disclosed antenna structures and electronic microsystems are capable of physically disappearing in a controlled, triggerable manner. Some variations provide an on-chip transient antenna comprising a semiconductor substrate containing ion-implanted hydrogen atoms and a conductor network comprising metals bridged by low-melting-temperature metals. Some variations provide an off-chip transient antenna comprising a flexible substrate containing a polymer, nanoporous silicon particles, and an oxidant for silicon, and a conductor network comprising metals bridged by low-melting-temperature metals. Other variations provide a method of introducing physical transience to a semiconductor integrated circuit, comprising thinning a substrate from the back side, implanting hydrogen ions into the thinned substrate to introduce latent structural flaws, depositing a semiconductor integrated circuit or sensor chip, and providing a controllable heating source capable of activating the latent structural flaws. These novel approaches are compatible with existing integrated circuits processing, preserve antenna performance, and use foundry-compatible techniques.

Transient antennas and transient electronics

A method for fabricating a digital memristor crossbar array includes applying a protective layer on at least a portion of a memristive layer. A method for fabricating an analog memristor crossbar array includes providing a self-aligning first electrode layer. An analog memristor includes a memristive layer bar arranged to self-align said second electrode on said memristive layer along its length.

Memristor devices and fabrication

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Santa Monica, CA, United States of America

Dana C Wheeler