Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Dana A Gronbeck

Michael K Gallagher

Jeffrey M Calvert

Timothy G Adams

Chi Q Truong

George G Barclay

Anthony Zampini

Amy M Kwok

James F Cameron

Ashish A Pandya

Suzanne M Coley

Gregory P Prokopowicz

Kathleen M O'Connell

Stefan J Caporale

Subbareddy Kanagasabapathy

Leo L Linehan

Kao Xiong

Michael N Gaudet

William Andrew Burke

The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Antireflective hard mask compositions

A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

Electronic devices having air gaps

Multilayer photoresist systems are provided. In particular aspects, the invention relates to underlayer composition for an overcoated photoresist, particularly an overcoated silicon-containing photoresist. Preferred underlayer compositions comprise one or more resins or other components that impart etch-resistant and antireflective properties, such as one or more resins that contain phenyl or other etch-resistant groups and anthracene or other moieties that are effective anti-reflective chromophores for photoresist exposure radiation.

Multilayer photoresist systems

Air gap formation

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

Electronic device manufacture

Disclosed are photoimageable compositions containing silsesquioxane binder polymers and photoactive compounds, methods of forming relief images using such compositions and methods of manufacturing electronic devices using such compositions. Such compositions are useful as photoresists and in the manufacture of optoelectronic devices.

Photoimageable composition

The present invention provides polymers which are substantially or completely free of inorganic contaminants and the use of such polymers as a resin component for photoresist compositions, particularly chemically-amplified positive-acting resists. Polymers of the invention also are suitable for use as a resin component for antireflective coating compositions (ARCs). More particularly, the invention provides methods for reducing such contaminants in polymerization initiators, particularly free radical initiators.

Reduction of inorganic contaminants in polymers and photoresist compositions comprising same

The invention is for a process of removing dissolved heavy metal cation contaminants from an organic solution. The process of the invention involves providing a mixture of a chelating ion exchange resin modified by removal of sodium ions therefrom and an anion exchange resin and contacting said organic solution with said exchange resins for a time sufficient to remove ionic metal impurities and acids. The invention is useful for removal of ionic contaminants from organic solutions requiring high purity.

Process for removing heavy metal ions by ion exchange

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Holliston, MA, United States of America

Dana A Gronbeck