Elbit Systems of America, LLC

Eagle Technology, LLC

Exelis Inc.

Dan W Chilcott

Arlynn Walter Smith

John Richard Troxell

William J Baney

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

Wafer scale enhanced gain electron bombarded CMOS imager

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

Method for forming hermetic seals in MEMS devices

A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.

Image intensifier with thin layer transmission layer support structures

A method of manufacturing a multi-layer image intensifier wafer includes fabricating first and second glass wafers, each having an array of cavities that extend between respective openings in first and second surfaces of the respective glass wafer; doping a semiconductor wafer to generate a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and to direct the plurality of electrons to a second surface of the semiconductor wafer, bonding a photo-cathode wafer to the first glass wafer; bonding the semiconductor wafer between the first and second glass wafers, and bonding the second glass wafer between the semiconductor wafer and an anode wafer (e.g., a phosphor screen or other electron detector). A section of the multi-layer image intensifier wafer may be sliced and evacuated to provide a multi-layer image intensifier.

Wafer scale image intensifier

A light intensifier includes a semiconductor structure to multiply electrons and block stray particles (e.g., photons and/or ions). The semiconductor structure includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges a reception surface of the semiconductor structure, blocking regions that are doped to direct the plurality of electrons towards emissions areas of an emission surface of the semiconductor structure, and shielding regions that are doped to absorb stray particles that impinge the emission surface of the semiconductor structure.

Image intensifier with stray particle shield

An electron multiplier for a Micro-Electro-Mechanical-Systems (MEMS) image intensifier includes an input surface, an emission surface, a plurality of doped ribs, and a plurality of textured surfaces. The input surface receives electrons and the emission surface is opposite the input surface. The plurality of doped ribs extends at least partially between the input surface and the emission surface to form a plurality of pixels. The plurality of textured surfaces are disposed in the plurality of pixels.

Electron multiplier for MEMs light detection device

An improved microelectromechanical device includes an upper plate, a lower plate, and a spacing structure. The upper plate includes a first surface and an opposite second surface. The lower plate is spaced from the upper plate. The lower plate includes a third surface that faces the first surface of the upper plate and a fourth surface that is opposite of the third surface. The lower plate also includes a series of structures disposed with the third surface of the lower plate. The spacing structure is coupled to the upper and lower plate. The spacing structure includes a base portion that is sealed to the first surface of the upper plate and the third surface of the lower plate. The spacing structure further includes a protrusion that extends from the base portion between the upper and lower plates.

Structure for controlling flashover in MEMS devices

Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.

Growing community of inventors

Buchanan, VA, United States of America

Dan W Chilcott