Texas Instruments Corporation

Dan T Hockersmith

John Michael Bedinger

John E Spencer

Randall C Hildenbrand

Rick Kottman

Thomas H Taylor

Brad W Larson

Steve Pebley

Cecil J Davis

John I Jones

Randall E Johnson

Frederick W Brown

Stanford P Kohan

Joe W Gilbert

William S Jaspersen

The disclosure relates to a part carrier of universal design wherein a common carrier is provided with a customizing plate secured on a flat surface thereof and exposing a portion of the flat surface. The walls formed between the customizing plate and the flat surface define a reference surface. A clamp having a rigid finger and a resilient finger applies a force to the device being secured to the part carrier wherein the resilient finger forces the device against one reference surface and then deforms as the second finger forces the device into the reference position.

Method of holding a part for fabrication

Universal tooling system for microwave hybrid devices

A substrate that is a portion of an electrode of a plasma reactor has two positions, a low position and a process position. They are achieved without generating particulate contaminate and are achieved additionally while the reaction chamber is maintained at its process pressure. Stainless steel bellows assemblies have an inter volume that are capped at both ends from a chamber between the bellows. One end of the bellows assembly is mounted to the process chamber in a fixed position and a substrate to the other end is attached and is movable. A positioning is achieved by introducing compressed air in the chamber between the bellows and overcoming the process pressure in the outer chamber. A second position is achieved by releasing the compressed air between the chamber between the bellows and allowing the process pressure in the process chamber to collapse the bellows assembly.

Plasma etch movable substrate

A plasma reactor for the manufacturing of semiconductor devices has powered loadlocks and a main process chamber where slices can be processed one slice at a time with pre-etch plasma treatments before the main etching processing and afterwards receive a post etch treatment. The system comprises powered loadlocks, a main chamber, vacuum pumps radio frequency power supplier, radio frequency matching networks, heat exchangers and throttle valve and pressure controllers, gas flow distribution and microprocessor controllers. The semiconductor wafers are automatically fed one at a time from storage cassettes through isolation gates with articulated mechanical arms to a powered entry loadlock for pre-etching processes. At the completion of the pre-etching processing, the semiconductor wafer is transferred to the main chamber automatically for the main etch process and then to the powered exit loadlock for post etch treatment and finally to an output cassette.

Automated single slice powered load lock plasma reactor

An electrode and substrate assembly for a plasma reactor allows high power plasma processing with low frequency excitation. The electrode sub-assembly is contained in a chamber which is used for pre-treatment such as de-scumming photoresist or for post-etch resist stripping and passivation. A post-etch treatment is essential in plasma aluminum etching.

Powered load lock electrode/substrate assembly including robot arm,

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Garland, TX, United States of America

Dan T Hockersmith