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Beaverton, OR, United States of America

Dan S Lavric

Average Co-Inventor Count = 4.77

ph-index = 2

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 15

Dan S LavricOleg Golonzka (5 patents)Dan S LavricDax M Crum (5 patents)Dan S LavricTahir Ghani (4 patents)Dan S LavricJitendra Kumar Jha (3 patents)Dan S LavricAnand S Murthy (2 patents)Dan S LavricGlenn A Glass (2 patents)Dan S LavricJeffrey S Leib (2 patents)Dan S LavricStephen T Chambers (2 patents)Dan S LavricSrijit Mukherjee (2 patents)Dan S LavricSuresh Vishwanath (2 patents)Dan S LavricOrb Acton (2 patents)Dan S LavricOmair Saadat (2 patents)Dan S LavricLukas M Baumgartel (2 patents)Dan S LavricThomas T Troeger (2 patents)Dan S LavricDaniel B O'Brien (2 patents)Dan S LavricJohn F Richards (2 patents)Dan S LavricRishabh Mehandru (1 patent)Dan S LavricFlorian Gstrein (1 patent)Dan S LavricChristopher J Wiegand (1 patent)Dan S LavricSzuya S Liao (1 patent)Dan S LavricAshish Agrawal (1 patent)Dan S LavricMohit K Haran (1 patent)Dan S LavricDaniel B Bergstrom (1 patent)Dan S LavricDaniel Ouellette (1 patent)Dan S LavricYing Pang (1 patent)Dan S LavricDavid J Towner (1 patent)Dan S LavricPadmanava Sadhukhan (1 patent)Dan S LavricMichal Mleczko (1 patent)Dan S LavricTimothy Michael Duffy (1 patent)Dan S LavricRobert Niffenegger (1 patent)Dan S LavricRobert W Heussner (1 patent)Dan S LavricJoel M Gregie (1 patent)Dan S LavricVishal Tiwari (1 patent)Dan S LavricYenTing Chiu (1 patent)Dan S LavricDan S Lavric (11 patents)Oleg GolonzkaOleg Golonzka (82 patents)Dax M CrumDax M Crum (23 patents)Tahir GhaniTahir Ghani (496 patents)Jitendra Kumar JhaJitendra Kumar Jha (6 patents)Anand S MurthyAnand S Murthy (347 patents)Glenn A GlassGlenn A Glass (173 patents)Jeffrey S LeibJeffrey S Leib (26 patents)Stephen T ChambersStephen T Chambers (16 patents)Srijit MukherjeeSrijit Mukherjee (14 patents)Suresh VishwanathSuresh Vishwanath (10 patents)Orb ActonOrb Acton (6 patents)Omair SaadatOmair Saadat (4 patents)Lukas M BaumgartelLukas M Baumgartel (4 patents)Thomas T TroegerThomas T Troeger (4 patents)Daniel B O'BrienDaniel B O'Brien (3 patents)John F RichardsJohn F Richards (2 patents)Rishabh MehandruRishabh Mehandru (132 patents)Florian GstreinFlorian Gstrein (66 patents)Christopher J WiegandChristopher J Wiegand (53 patents)Szuya S LiaoSzuya S Liao (50 patents)Ashish AgrawalAshish Agrawal (48 patents)Mohit K HaranMohit K Haran (27 patents)Daniel B BergstromDaniel B Bergstrom (16 patents)Daniel OuelletteDaniel Ouellette (15 patents)Ying PangYing Pang (6 patents)David J TownerDavid J Towner (4 patents)Padmanava SadhukhanPadmanava Sadhukhan (2 patents)Michal MleczkoMichal Mleczko (1 patent)Timothy Michael DuffyTimothy Michael Duffy (1 patent)Robert NiffeneggerRobert Niffenegger (1 patent)Robert W HeussnerRobert W Heussner (1 patent)Joel M GregieJoel M Gregie (1 patent)Vishal TiwariVishal Tiwari (1 patent)YenTing ChiuYenTing Chiu (1 patent)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Intel Corporation (11 from 54,688 patents)


11 patents:

1. 12402387 - Integrated circuit structures including a titanium silicide material

2. 12310060 - Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerances

3. 12295170 - Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer

4. 12113068 - Fabrication of gate-all-around integrated circuit structures having additive metal gates

5. 12051698 - Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer

6. 12046654 - Integrated circuit structures including a titanium silicide material

7. 11984506 - Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer

8. 11476164 - Integrated circuit structures having differentiated workfunction layers

9. 11018222 - Metallization in integrated circuit structures

10. 6846752 - Methods and devices for the suppression of copper hillock formation

11. 6818548 - Fast ramp anneal for hillock suppression in copper-containing structures

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