Nissin Ion Equipment Co., Ltd.

Kyoto University

Dan Nicolaescu

Shigeki Sakai

Junzo Ishikawa

Yasuhito Gotoh

Masao Naito

A magnet used in an ion beam irradiation apparatus includes a pair of magnetic poles arranged facing each other on an inner side of the magnet across an ion beam; a plurality of magnetic field concentrating members that are arranged on each of the opposing surfaces of the magnetic poles and that perform a function of trapping electrons between the magnetic poles; and a protective member that covers opposing surfaces of the magnetic field concentrating members.

Magnet for ion beam irradiation apparatus equipped with protective member that covers plurality of magnetic field concentrating members

To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.

Ion beam irradiation device and method for suppressing ion beam divergence

An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam.

Ion implanter provided with beam deflector and asymmetrical einzel lens

A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function.

Collimator magnet for ion implantation system

An ion beam irradiating apparatus has a field emission electron sourcewhich is disposed in a vicinity of a path of the ion beam, and which emits electrons. The field emission electron sourceis placed in a direction along which an incident angle formed by the electronsemitted from the electron sourceand a direction parallel to the traveling direction of the ion beamis in the range from &#x2212;15 deg. to +45 deg. (an inward direction of the ion beamis +, and an outward direction is &#x2212;).

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Kyoto, Japan

Dan Nicolaescu