Micron Technology Incorporated

Nan Ya Technology Corporation

Dow Global Technolgoies LLC

Rohm & Haas Electronic Materials LLC

Dan B Millward

Timothy A Quick

Scott E Sills

Kaveri Jain

Scott L Light

Jianming Zhou

Zishu Zhang

Anton J deVillers

Yuan He

Michael D Hyatt

Eugene P Marsh

Lijing Gou

Gurtej S Sandhu

Donald L Westmoreland

J Neil Greeley

Wayne H Huang

Stefan Uhlenbrock

Peter Trefonas, Iii

Phillip Dene Hustad

Xue Chen

Jong Keun Park

Adam L Olson

Joseph Neil Greeley

William R Brown

Ho Seop Eom

Neil Joseph Greeley

Nik Mirin

Christopher Nam Lee

Karl Stuen

Stephen J Kramer

Ranjan Khurana

Gurpreet S Lugani

Anton J De Villiers

Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

Stamps including a self-assembled block copolymer material, and related methods

Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Methods of forming a semiconductor device using block copolymer materials

Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

Methods of removing particles from over semiconductor substrates

Methods of forming a self-assembled block copolymer material

A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.

Methods of forming semiconductor device structures, and methods of forming capacitor structures

Methods of forming a nanostructured polymer material including block copolymer materials

Stamps and methods of forming a pattern on a substrate

Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Methods of forming semiconductor device structures including metal oxide structures

A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

Methods of forming semiconductor device structures

Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Methods of forming patterns with a mask formed utilizing a brush layer

Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference

Methods for adhering materials and methods for enhancing adhesion between materials are disclosed. In some embodiments, a polymer brush material is bonded to a base material, and a developable polymer resist material is applied over the grafted polymer brush material. The resist material is at least partially miscible in the grafted polymer brush material. As such, the resist material at least partially dissolves within the grafted polymer brush material to form an intertwined material of grafted polymer brush macromolecules and resist polymer macromolecules. Adhesion between the developable polymer resist and the base material may be thereby enhanced. Also disclosed are related semiconductor device structures.

Semiconductor device structures comprising a polymer bonded to a base material and methods of fabrication

Semiconductor device structures including metal oxide structures

Growing community of inventors

Boise, ID, United States of America

Dan B Millward