Kla Tencor Corporation

Kla-tencor Technologies Corporation

Kla Corporation

Kla Instruments Corporation

General Scientific Corporation

Ardco, Inc.

Damon Floyd Kvamme

Tao-Yi Fu

Mark Joseph Wihl

Michael E Fein

Marek Zywno

Robert W Walsh

Daniel C Wack

Rui-Fang Shi

Stan Stokowski

David Alles

Donald Pettibone

Daimian Wang

Haifeng Huang

Richard C Kim

Zain Kahuna Saidin

David Garth Emery

Chun Lee

James P McGuire, Jr

Kevin A Peterlinz

Yalin Xiong

Wu Jiang

Frank Chilese

John Rice Rogers

Hidong Kwak

Xin Ye

Garry Allen Rose

John Michael Rodgers

Daniel R Hennigan

Joseph Walsh

Ali R Ehsani

Yanming Zhao

Fuming Wang

I-Fan Wu

Richard A Mamelson

Eduardo Soto

Gang Lei

Esen Salcin

Matthias C Krantz

Bernd Burfeindt

Christopher Davis

Joseph Armstrong

Amrish Kelkar

Kent McKernan

Sseunhyeun Jo

David Jalil Zare

Uri Greenberg

Ronald L Roncone

Francis C Chilese

To calibrate a TDI photomask inspection tool, a photomask with a plurality of distinctly patterned regions is loaded into the tool. The plurality of distinctly patterned regions is successively illuminated with an EUV beam of light. While illuminating respective distinctly patterned regions, respective instances of imaging of the respective distinctly patterned regions are performed using a TDI sensor in the inspection tool. While performing the respective instances of imaging, a reference intensity detector is used to measure reference intensities of EUV light collected from the photomask. Based on the results of the respective instances of imaging and the measured reference intensities of EUV light, linearity of the TDI sensor is determined.

EUV in-situ linearity calibration for TDI image sensors using test photomasks

An enclosure surrounding the optical component can be connected with a vapor source. The vapor source can provide a vapor to the enclosure with a vapor level from 500 ppm to 15000 ppm. The concentration of vapor in the enclosure can increase the lifespan of the optical component in the enclosure.

Vapor as a protectant and lifetime extender in optical systems

An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.

Inspection system with non-circular pupil

Disclosed are methods and apparatus for measuring and controlling polarization for inspection of a semiconductor sample. The method includes (i) setting up an inspection system in a specific mode of operation, (ii) incrementing a first waveplate of the system through a plurality of rotations while keeping a second waveplate of the system static, (iii) measuring an intensity signal from non-patterned areas of the sample for each rotation of the first waveplate, (iv) incrementing the second waveplate through a plurality of rotations while keeping the first waveplate static (v) measuring an intensity signal from non-patterned areas of the sample for each rotation of the second waveplate, (vi) generating a model of a plurality of polarization and waveplate parameters for the system to simulate the intensity signals that were measured for each rotation of the first and/or second waveplate, and (vii) determining the polarization and waveplate parameters for the system based on the model and a polarization state on photomask plane based on the polarization and waveplate parameters.

Methods and apparatus for polarizing reticle inspection

Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.

Source multiplexing illumination for mask inspection

Methods and systems for performing single wavelength ellipsometry (SWE) measurements with reduced measurement spot size are presented herein. In one aspect, a pupil stop is located at or near a pupil plane in the collection optical path to reduce sensitivity to target edge diffraction effects. In another aspect, a field stop is located at or near an image plane conjugate to the wafer plane in the collection optical path to reduce sensitivity to undesired optical-structural interactions. In another aspect, a linear polarizer acting on the input beam of the SWE system includes a thin, nanoparticle based polarizer element. The nanoparticle based polarizer element improves illumination beam quality and reduces astigmatism on the wafer plane. The pupil and field stops filter out unwanted light rays before reaching the detector. As a result, measurement spot size is reduced and tool-to-tool matching performance for small measurement targets is greatly enhanced.

Single wavelength ellipsometry with improved spot size capability

An apparatus for inspecting a photomask, comprising an illumination source for generating a light which illuminates a target substrate, objective optics for receiving and projecting the light which is reflected from the target substrate, the objective optics includes a first mirror arranged to receive and reflect the light which is reflected from the target substrate, a second mirror which is arranged to receive and reflect the light which is reflected by the first mirror, a third mirror which is arranged to receive and reflect the light which is reflected by the second mirror, and a segmented mirror which is arranged to receive and reflect the light which is reflected by the third mirror. The segmented mirror includes at least two mirror segments. The apparatus further includes at least one sensor for detecting the light which is projected by the objective optics.

Segmented mirror apparatus for imaging and method of using the same

Disclosed are methods and apparatus for generating a sub-208 nm laser. A laser apparatus includes one or more seed radiation sources for generating a first radiation beam having a first fundamental wavelength on a first optical path and a second radiation beam having a second fundamental wavelength on a second optical path, a first amplifier for amplifying the first radiation beam, a second amplifier for amplifying the second radiation beam, and a wavelength conversion module comprising a plurality of crystals for frequency multiplying and mixing the amplified first and second radiation beams to produce an output beam at a fifth harmonic that is less than about 208 nm.

Deep ultra-violet light sources for wafer and reticle inspection systems

The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.

Illumination system with time multiplexed sources for reticle inspection

An apparatus for focusing light in a semi-conductor inspection system, including: a first mirror arranged to reflect extreme ultra-violet (EUV) generated by a plasma source; and a second mirror arranged to focus the EUV light, reflected from the first mirror, onto a first intermediate focus plane. A homogenizing tunnel, including: a first aperture having a first shape and a first size and arranged to receive extreme ultra-violet (EUV) light; a second aperture having a second shape and a second size; and a passageway connecting the first and second apertures and arranged to homogenize the EUV light received by the first aperture. The first shape is different from the second shape or the first size is different from the second size.

Adaptable illuminating apparatus, system, and method for extreme ultra-violet light

One embodiment relates to an apparatus that includes an illumination source () for illuminating a target substrate (), objective optics () for projecting the EUV light which is reflected from the target substrate, and a sensor () for detecting the projected EUV light. The objective optics includes a first mirror (, or) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (, or) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (, or) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (, or) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

Apparatus for EUV imaging and methods of using same

Methods and apparatus relating to electromagnetic beam (e.g., laser beam) conditioning are described. In an embodiment, electromagnetic beam conditioning may be performed utilizing reflectors to temporally differentiate electromagnetic beam subsections and sub-beams resulting in reduced spatial coherence of the beam. Other embodiments are also described.

Beam conditioning to reduce spatial coherence

Methods for detecting and classifying defects on a reticle are provided. One method includes acquiring images of the reticle at first and second conditions during inspection of the reticle. The first condition is different than the second condition. The method also includes detecting the defects on the reticle using one or more of the images acquired at the first condition. In addition, the method includes classifying an importance of the defects detected on the reticle using one or more of the images acquired at the second condition. The detecting and classifying steps are performed substantially simultaneously during the inspection.

Methods for detecting and classifying defects on a reticle

Disclosed is an optical inspection system for inspecting the surface of a substrate. The optical inspection system includes a light source for emitting an incident light beam along an optical axis and a first set of optical elements arranged for separating the incident light beam into a plurality of light beams, directing the plurality of light beams to intersect with the surface of the substrate, and focusing the plurality of light beams to a plurality of scanning spots on the surface of the substrate. The inspection system further includes a light detector arrangement including individual light detectors that correspond to individual ones of a plurality of reflected or transmitted light beams caused by the intersection of the plurality of light beams with the surface of the substrate. The light detectors are arranged for sensing the light intensity of either the reflected or transmitted light.

Multiple beam inspection apparatus and method

Growing community of inventors

Los Gatos, CA, United States of America

Damon Floyd Kvamme