International Business Machines Corporation

Harvard College

Karlsruher Institut F&#xfc;r Technologie

Aselsan Elektronik Sanayi Ve Ticaret A.s.

Taiwan Bluestone Technology Ltd.

Globalfoundries Inc.

Aselsan Elektronik Sanay Ve Ticaret A.s.

Damon B Farmer

Shu-Jen Han

Abram L Falk

Phaedon Avouris

George Stojan Tulevski

Ali Afzali-Ardakani

Yu-Ming Lin

Aaron Daniel Franklin

Joshua T Smith

Steven J Holmes

Jianshi Tang

Jessie Carrigan Rosenberg

Devendra K Sadana

Yu Zhu

Roy Gerald Gordon

Kafai Lai

Deborah A Neumayer

Brent A Wacaser

Kuan-Neng Chen

Hugen Yan

Yilei Li

Michael A Guillorn

Balasubramanian Pranatharthiharan

Hariklia Deligianni

Qinghuang Lin

Roy Rongqing Yu

Dirk Pfeiffer

Christos Dimitrios Dimitrakopoulos

Matthew Warren Copel

Nathan P Marchack

Lidija Sekaric

Hareem Tariq Maune

Dahyun Oh

Gokhan Demirci

Cagla Akgun

Esin Akca

Bruce Bennett Doris

Paul Michael Solomon

Martin Michael Frank

Talia S Gershon

Chia-Yu Chen

Michael Engel

Fengnian Xia

John Jacob Yurkas

Priscilla D Antunez

Mathias B Steiner

Suyog Gupta

Ralph Krupke

Sataoshi Oida

Takashi Ando

Stephen W Bedell

Guy M Cohen

Keith Kwong Hon Wong

Alfred Grill

Chengwen Pei

Rudy J Wojtecki

Michael Patrick Chudzik

Zhen Zhang

Zhengwen O Li

Eric Andrew Joseph

Hiroyuki Miyazoe

Emily R Kinser

William M Green

Jene A Golovchenko

Daniel Branton

Charles Thomas Rettner

Yu Luo

Lynne Marie Gignac

Jian Yu

Wenjuan Zhu

Alexander M Friz

Ying He

Noel Arellano

Cristina Camagong

Charles M Marcus

Kuan-Chang Chiu

Andrei Fustochenko

James R Williams

Toshiyuki Mitsui

Peng Chen

Leonidas Ernesto Ocola

A nanotube polariton quantum dot photon source device includes a substrate. A nanotube is arranged on the substrate, and an incident light source is configured to generate an exciton-plasmon polariton excitation in the nanotube. The nanotube emits a photon in response to the generated exciton plasmon polariton excitation. The nanotube has a length L<50 nm to emit one or more photons at a desired frequency.

Polariton quantum dots comprising ultrashort carbon nanotubes

Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate an epitaxial Josephson junction transmon device are provided. According to an embodiment, a device can comprise a substrate. The device can further comprise an epitaxial Josephson junction transmon device coupled to the substrate. According to an embodiment, a device can comprise an epitaxial Josephson junction transmon device coupled to a substrate. The device can further comprise a tuning gate coupled to the substrate and formed across the epitaxial Josephson junction transmon device. According to an embodiment, a device can comprise a first superconducting region and a second superconducting region formed on a substrate. The device can further comprise an epitaxial Josephson junction tunneling channel coupled to the first superconducting region and the second superconducting region.

Epitaxial Josephson junction device

A porous thin film includes a framework that includes a plurality of pores. The pores extend from an opening located at an upper surface of the framework to a bottom surface contained in the framework. A pore-coating film is formed on sidewalls and the bottom surface of the pores.

Percolation doping of inorganic-organic frameworks for multiple device applications

Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.

Area-selective deposition of metal nitride to fabricate devices

A membrane is electrically charged to a polarity. A surface of carbon nanotubes (CNTs) in a solution is caused to acquire a charge of the polarity. The solution is filtered through the membrane. An electromagnetic repulsion between the membrane of the polarity and the CNTs of the polarity causes the CNTs to spontaneously align to form a crystalline structure.

Crystalline film of carbon nanotubes

A semiconductor structure comprises a substrate, a patch of optically tunable material disposed over the substrate, a first electrode coupled to the patch of optically tunable material and a switch providing a current source, and a second electrode coupled to the patch of optically tunable material and a ground voltage. The first electrode and the second electrode are configured to modify a state of the patch of optically tunable material to adjust a reflectivity of the patch of optically tunable material.

Reconfigurable geometric metasurfaces with optically tunable materials

A tunable metasurface is provided. The tunable metasurface includes a mirror, a dielectric layer disposed on the mirror, a metallic antenna and a phase change material (PCM) layer. The PCM layer is interposed between the dielectric layer and the metallic antenna. The PCM layer is configured to be amorphous or crystalline. The mirror, the dielectric layer, the metallic antenna and the PCM layer cooperatively form a Fabry Perot cavity in which light incident on the metallic antenna from free space is reflected between the mirror and the metallic antenna. The PCM layer has blanket dimensions relative to those of the metallic antenna such that the Fabry Perot cavity is critically coupled with the free space when the PCM layer is only one of amorphous and crystalline.

Configurable geometric metasurface antenna

Epitaxial Josephson junction transmon device

A method for forming a nanostructure includes coating an exposed surface of a base layer with a patterning layer. The method further includes forming a pattern in the patterning layer including nano-patterned non-random openings, such that a bottom portion of the non-random openings provides direct access to the exposed surface of the base layer. The method also includes depositing a material in the non-random openings in the patterning layer, such that the material contacts the exposed surface to produce repeating individually articulated nano-scale features. The method includes removing remaining portions of the patterning layer. The method further includes forming an encapsulation layer on exposed surfaces of the repeating individually articulated nanoscale features and the exposed surface of the base layer.

Nanostructure featuring nano-topography with optimized electrical and biochemical properties

A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

N-type end-bonded metal contacts for carbon nanotube transistors

Techniques regarding qubit devices comprising silicon-based Josephson junctions and/or the manufacturing of qubit devices comprising silicon-based Josephson junctions are provided. For example, one or more embodiments described herein can comprise an apparatus that can include a Josephson junction comprising a tunnel barrier positioned between two vertically stacked superconducting silicon electrodes.

Silicon-based Josephson junction for qubit devices

According to an embodiment of the present invention, a method of producing a computing device includes providing a semiconductor substrate, and patterning a mask on the semiconductor substrate, the mask exposing a first portion of the semiconductor substrate and covering a second portion of the semiconductor substrate. The method includes implanting the first portion of the semiconductor substrate with a dopant. The method includes annealing the first portion of the semiconductor substrate to form an annealed doped region, while maintaining the second portion of the semiconductor substrate as an unannealed portion.

Glassy carbon mask for immersion implant and selective laser anneal

An apparatus includes two or more electrically rotatable antennas providing a reconfigurable metasurface, each of the electrically rotatable antennas including a disk of optically tunable material. The apparatus also includes a control circuit including a plurality of switches each coupled to (i) one of a plurality of electrodes, the plurality of electrodes being arranged proximate different portions of at least one surface of each of the disks of optically tunable material and (ii) to at least one of a current source and a ground voltage. The control circuit is configured to modify states of portions of the optically tunable material in each of the disks of optically tunable material utilizing current supplied between at least two of the plurality of electrodes to adjust reflectivity of the portions of the optically tunable material to dynamically reconfigure respective antenna shape configurations of each of the electrically rotatable antennas.

Electrically rotatable antennas formed from an optically tunable material

An apparatus includes two or more tunable antennas providing a reconfigurable metasurface, each of the tunable antennas including a plurality of pixels of optically tunable material, and a control circuit including switches providing current sources and a ground voltage, the switches being coupled to respective ones of the pixels of optically tunable material in each of the tunable antennas via first electrodes, the ground voltage being coupled to respective ones of the pixels of optically tunable material in each of the tunable antennas via second electrodes. The control circuit is configured to modify states of respective ones of the plurality of pixels of optically tunable material in the tunable antennas utilizing current supplied between the first electrodes and the second electrodes to adjust reflectivity of the plurality of pixels of optically tunable material in each of the tunable antennas to dynamically reconfigure respective antenna shape configurations of the tunable antennas.

Reconfigurable metasurface with tunable antennas formed from arrays of pixels of an optically tunable material

Methods of forming a battery include forming a thin graphene cathode on a substrate. A lithium anode is formed and an electrolyte is formed between the thin graphene cathode and the lithium anode.

Thin cathode for micro-battery

Growing community of inventors

Eastchester, NY, United States of America

Damon B Farmer