Trina Solar Co., Ltd.

Trina Solar (Suqian) Photoelectric Co., Ltd.

Daming Chen

Yifeng Chen

Hong Chen

Chengfa Liu

Guangtao Yang

Yunyun Hu

Wei Liu

Xueling Zhang

Shuai Zhang

Yugang Lu

Yang Zou

Yaqian Zhang

Xiaopeng Wu

Guanchao Xu

Rui Yang

Wenxian Ji

Zhuohan Zhang

Yiqi Chen

Kuiyi Wu

Binglun Han

Rui Xia

Xiaobing Ding

Zhiyuan Liu

The present disclosure provides an interdigitated back contact cell and a manufacturing method thereof. The interdigitated back contact cell includes: a substrate including a front side and a back side, the front side being arranged opposite to the back side; where, along a first direction, first functional regions and second functional regions are alternately arranged on the back side of the substrate; an isolation region is arranged between every adjacent first functional region and second functional region; and the first emitter is spatially isolated from one adjacent second emitter by a corresponding isolation region; and the first diffusion layer is in contact with at least one adjacent second diffusion layer in a corresponding region of a corresponding isolation region. The interdigitated back contact cell provided by the present disclosure has a lower reverse breakdown voltage, a high component reliability, and a high cell efficiency.

Interdigitated back contact cell and manufacturing method thereof

The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Solar cell, method for manufacturing the same, photovoltaic module, and photovoltaic system

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (), including a first surface (S) and a second surface (S) being opposite to each other, wherein the first surface (S) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (), located in the first region (A) of the first surface (S); a polysilicon layer () located on at least a part of a surface of the passivating contact layer () away from the substrate (); the passivating contact layer () including a first tunneling layer () and a first doped layer (), the first tunneling layer () and the first doped layer () being sequentially stacked on the first region (A) of the first surface (S) of the substrate () in a direction away from the second surface (S); and a first passivation layer (), located on a surface of the polysilicon layer () away from the passivating contact layer () and on the second region (B) of the first surface (S).

Solar cell, method for manufacturing the same, photovoltaic module and photovoltaic system

A solar cell includes: a substrate including a first surface and a second surface arranged opposite to each other and a plurality of lateral surfaces adjacent to and located between the first surface and the second surface; a plurality of pyramid base shaped textured structures being constructed on the second surface and each of the lateral surfaces, wherein a minimum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the lateral surfaces is L1, a maximum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the second surface is L2, and L1>L2; a doped conductive layer arranged on the first surface; and a passivated contact layer including a polysilicon doped conductive layer, the passivated contact layer being arranged on the second surface.

Solar cell and manufacturing method thereof, photovoltaic module, and photovoltaic system

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

Hybrid heterojunction solar cell, cell component and preparation method

A solar cell comprises a substrate having an opposite first surface and a second surface, and the second surface has a first regions and a second regions adjacent in the first direction; a first passivation layer located on the first surface; a first doped layer and a tunnel oxide layer sequentially stacked in the first region; a first insulating layer located on a surface of the first doped layer away from the substrate; a second passivation layer located in the second region and extending to a surface of the first insulating layer away from the substrate; a second doped layer located on a surface of the second passivation layer away from the substrate, and a second insulating layer located between the second passivation layer and the first doped layer, the tunnel oxide layer in the first direction, a surface of the second insulating layer away from the substrate contacting with the first insulating layer.

Solar cells

The present disclosure provides a solar cell including a substrate, a first emitter, a second emitter, an insulating spacing structure, a first electrode, and a second electrode. The substrate includes a front surface and a back surface opposite to each other. The first emitter and the second emitter are disposed on the back surface of the substrate. The first electrode is disposed on a side of the first emitter away from the substrate, and the first electrode is electrically connected to the first emitter. The second electrode is disposed on a side of the second emitter away from the substrate, and the second electrode is electrically connected to the second emitter. The insulating spacing structure is disposed between the first emitter and the second emitter, and the first emitter and the second emitter are spaced from each other by the insulating spacing structure.

Solar cell and method for preparing the same

A stacked cell and preparation method thereof. The stacked cell includes: a crystalline silicon cell; a conductive connecting layer located on a surface of the crystalline silicon cell; a first isolation layer extending from a surface of the conductive connecting layer facing away from the crystalline silicon cell to penetrate through the conductive connecting layer, and a perovskite cell located on the surface of the conductive connecting layer facing away from the crystalline silicon cell.

Stacked cell and preparation method thereof

A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The manufacturing method includes: providing a substrate; and dividing a second surface of the substrate into a first region, a second region, and an isolation region; sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate; removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region; doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.

A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting layer is provided. A doped conducting layer is disposed at least on the first surface and the portion of the first side surface, thereby covering the textured structure. A passivating contact layer is formed on the second surface of the substrate. A first passivation layer is formed on the doped conducting layer. The first passivation layer covers the first surface and at least the portion of the first side surface, thereby covering at least the doped conducting layer. A second passivation layer is formed on the passivating contact layer. The second passivation layer covers the second surface, thereby covering the passivating contact layer.

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Changzhou, China

Daming Chen