Commissariat a L'energie Atomique Et Aux Energies Alternatives

Université Grenoble Alpes

Aledia

Damien Salomon

Joël Eymery

Christophe Durand

Amélie Dussaigne

Xiaojun Chen

Philipe Gilet

The invention relates to a method for manufacturing an optoelectronic device () including wire-like, conical, or frustoconical semiconductor elements () predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (), the side surfaces () of which are covered with a shell () including at least one active region (), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.

Optoelectronic device comprising three-dimensional semiconductor elements, and method for manufacturing said device

A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.

Method of selective growth without catalyst on a semiconducting structure

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Grenoble, France

Damien Salomon