Commissariat a L'energie Atomique Et Aux Energies Alternatives

Epcos Ag

Damien Saint-Patrice

Bruno Reig

Sébastien Bolis

Fabrice Jacquet

Jean-Louis Pornin

Gudrun Henn

Marcel Giesen

Arnoldus Den Dekker

Alexandre Leon

Laurent Mollard

Gabriele Navarro

Florent Greco

Francois Marion

François Marion

Vincent Puyal

Stéphane Nicolas

Fabrice Jacuet

An electromechanical microsystem including two electromechanical transducers, a first deformable diaphragm and a cavity hermetically containing a deformable medium keeping a constant volume under the action of a change in the external pressure. The first diaphragm forms at least one portion of a first wall of the cavity and has a freely deformable area. The free area cooperates with an external member so that its deformation induces, or is induced by, a movement of the external member. The electromechanical transducers are configured so that a first electromechanical transducer forms a portion of the first wall of the cavity, and a second electromechanical transducer forms at least one portion of the wall opposite to the first wall of the cavity.

Electromechanical microsystem

An electromechanical microsystem including an electromechanical transducer, a deformable diaphragm and a cavity hermetically containing a deformable medium keeping a constant volume under the action of an external pressure change. The deformable diaphragm forms a wall of the cavity and has at least one free area so as to be elastically deformed. The electromechanical transducer is configured so that its movement depends on the change in the external pressure, and vice versa. The free area cooperates with an external member so that its deformation induces, or is induced by, a movement of the external member. Thus, the electromechanical microsystem is adapted to displace the external member or to detect a movement of this member, the electromechanical microsystem includes at least one pin, configured to bear on a peripheral portion of the free area so that a deformation of the free rea causes an inclination of the pin.

An RF switch provided with a first region based on a phase change material disposed between a first conductive element and a second conductive element and state control means for said first region, the switch being further provided with at least one first decoupling switch provided with a second region of phase change material.

RF/DC decoupling system for RF switches based on phase change material

A packaging structure including at least one hermetically sealed cavity in which at least one microelectronic device is arranged, the cavity being formed between a substrate and at least one cap layer through which several release holes are formed. Several separated portions of metallic material are provided such that each of the separated portions of metallic material is arranged on the cap layer above and around one of the release holes and forms an individual and hermetical plug of said one of the release holes. At least one diffusion barrier layer including at least one non-metallic material is arranged on the cap layer and forms a diffusion barrier against an atmosphere outside the cavity at least around the release holes. Parts of the diffusion barrier layer are not covered by the portions of metallic material.

Packaging structure of a microelectronic device having a hermeticity improved by a diffusion barrier layer

Switch including a phase change materials based structure where only one part is activatable

Method for making a cavity, comprising steps to:

Method of making a closed cavity comprising a flap protecting the cavity when it is closed

Commutator structure comprising several channels of phase change material and interdigitated control electrodes

A method for packaging a microelectronic device in an hermetically sealed cavity and managing an atmosphere of the cavity with a dedicated hole, including making said cavity between a support and a cap layer such that a sacrificial material and the device are arranged in the cavity; removing the sacrificial material through at least one release hole, and hermetically sealing the release hole; making a portion of wettable material on the cap layer, around a blind hole or a part of said outside surface corresponding to a location of said dedicated hole; making a portion of fuse material on the portion of wettable material; making the dedicated hole by etching the cap layer; and reflowing the portion of fuse material with a controlled atmosphere, forming a bump of fuse material which hermetically plugs said dedicated hole.

Method for packaging a microelectronic device in a hermetically sealed cavity and managing the atmosphere of the cavity with a dedicated hole

Method of hermetically sealing a hole with a fuse material, comprising the following steps: applying a portion of wettable material onto a surface such that it completely surrounds the hole made through said surface and is located outside the hole, or completely surrounds a first part of said surface corresponding to a location of the hole; applying a portion of fuse material on the portion of wettable material and on a second part of said surface located around the portion of wettable material; reflowing the portion of fuse material to form a bump of fuse material which has a shape corresponding to a part of a sphere, which is fastened only to the portion of wettable material and which hermetically plugs the hole; wherein the hole is made in said surface before reflowing the portion of fuse material.

Method of hermetically sealing a hole with a fuse material

A method for metalizing at least one blind via formed in at least one substrate, including: a) arranging at least one solid portion of electrically conductive material in the blind via, b) performing a thermal treatment of the solid portion of electrically conductive material, making it melt in the blind via, cooling the electrically conductive material, solidifying it in the blind via, and wherein, before carrying out step a), at least part of the walls of the blind via is covered with a material able to prevent wetting of said part of the walls of the blind via by the melted electrically conductive material obtained during the performance of step b), the solidified electrically conductive material obtained after carrying out step c) being able not to be secured to said non-wetting part of the walls of the blind via.

Method for metalizing blind vias

The invention relates to a method for making a connection component that comprises a set of conducting inserts to be electrically connected with another component, said inserts being hollow.

Method of making a connection component with hollow inserts

An interconnect device is disclosed including a support in which at least one hole is formed, the hole having walls forming a closed contour and being formed by a cavity and one or several slots communicating with the cavity. The slots extend in a direction making a non-zero angle with the main plane of the support. Several conducting elements are positioned on at least one wall of the hole and pass through the hole. The conducting elements are each intended to connect conducting areas to each other that are situated on either side of the support. At least one of the slots separates two of the conducting elements from each other.

Interconnect structure with cavity having one or several contact rises on the wall of the cavity and method for producing same

Interconnect structure comprising blind vias intended to be metalized

A method for making a micro-device including at least one receiving site for components, formed in a thickness of a substrate. The method includes: a) making in at least one first substrate adhesively bonded to a second substrate via a discontinuous adhesive bonding interface, at least one first trench around at least one sacrificial block of the first substrate, by etching the first substrate so as to expose the adhesive bonding interface; and b) removing the sacrificial block so as to make at least one first cavity in the first substrate.

Growing community of inventors

Chabeuil, France

Damien Saint-Patrice