Soitec

Damien Radisson

Frédéric Allibert

Jean-Marc Bethoux

Yann Sinquin

Christelle Veytizou

A method for producing a composite silicon carbide structure comprises:

Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on a carrier substrate of polycrystalline SiC

A substrate for radiofrequency microelectronic devices comprises a carrier substrate made of a semi-conductor, a sintered composite layer disposed on the carrier substrate and formed from powders of at least a first dielectric material and a second dielectric different from the first material, the sintered composite layer having a thickness larger than 5 microns and a thermal expansion coefficient that is matched with that of the carrier substrate to plus or minus 30%.

Substrate for radiofrequency applications and associated manufacturing method

A method for adjusting the stress state of a piezoelectric film having a first stress state at room temperature includes a step of forming an assembly including a carrier having a thermal expansion coefficient, a compliant layer placed on the carrier, and the piezoelectric film placed on the compliant layer, the piezoelectric film having a thermal expansion coefficient different from that of the carrier. The method also includes a step of heat treating the assembly, in which the assembly is heated to a treatment temperature above the glass transition temperature of the compliant layer. The present disclosure also relates to a process for fabricating an acoustic wave device comprising the piezoelectric layer the stress state of which was adjusted as described herein.

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Brignoud, France

Damien Radisson