Meyer Burger (germany) Gmbh

Roth & Rau Ag

Meyer Burger Gmbh

Damien Lachenal

Pierre Papet

Benjamin Strahm

Derk Bätzner

Guillaume Wahli

Till Kössler

Chloé Guerin

Loris Barraud

Antoine Descoeudres

Stefaan De Wolf

Jérôme Meixenberger

Disclosed is a method to fabricate an interdigitated back contact photovoltaic device including: providing a substrate of a first-type doping being an n-type or a p-type doping; realizing on a back side a semiconducting doped structure including individual doped layers portions of the first type doping and a semiconducting doped structure of a second type; realizing a conductive layer on top of the semiconducting structure; realizing a patterned isolation resist layer having contact apertures and isolation apertures onto the conductive layer; further applying conductive pads to the contact apertures; and etching the conductive layer up to the second-type doped layer to realize trenches to electrically separate first type charge collecting structures from second type charge collecting structures. Also disclosed is an interdigitated back contact photovoltaic device as manufactured according to the disclosed method of fabrication, and a photovoltaic system including at least two interdigitated back contact photovoltaic devices.

Photovoltaic device and method for manufacturing the same

Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer, and include each an amorphous layer portion situated between the predetermined areas and the at least partially nano-crystalline layer portions. The amorphous layer portions have a larger width than the width of the nano-crystalline layer portions. On top if the first patterned silicon layer, a second nano-crystalline silicon layer is deposited that has a doping of a second type being the other of the p-type doping or the n-type doping with respect to the doping-type of the first patterned silicon layer.

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Cortaillod, Switzerland

Damien Lachenal