E.i. Dupont De Nemours and Company

Cda Processing Limited Liability Company

Damien Francis Reardon

Juan Carlos Figueroa

Cengiz Ahmet Palanduz

Zhigang Rick Li

James F Ryley

Lijie Bao

Methods for fabricating a capacitor are provided. In the methods, a dielectric may be formed on a metal (e.g. nickel) substrate, and a copper electrode is formed thereon, followed by the thinning of the metal substrate from its non-coated face, and subsequently forming a copper electrode on the thinned, non-coated face of the substrate.

Thin film capacitor and method of fabrication thereof

The invention is directed to a lanthamide chelate composition having a lanthamide, a charged amidate ligand, and a mono- or bidentate neutrally charged coordination compound, the composition being represented by structure I or structure II wherein Lndesignates lanthamide, Ris alkyl, aryl, or heteroaryl; Ris alkyl, aminoalkyl, aryl or heteroaryl; M is a neutrally charged monodentate coordination compound, M' is a neutrally charged bidentate coordination compound, a=1 or 2; and wherein M and M&#x2032; comprise N, S, or O. It extends to the process of making the composition.

Rare-earth amidate coordination compounds

Deposited thin-film dielectrics having columnar grains and high dielectric constants are formed on heat treated and polished metal foil. The sputtered dielectrics are annealed at low oxygen partial pressures.

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Wilmington, DE, United States of America

Damien Francis Reardon