Rockley Photonics Limited

Damiana Lerose

Amit Singh Nagra

Hooman Abediasl

Guomin Yu

Pradeep Srinivasan

Haydn Frederick Jones

Aaron John Zilkie

Andrew George Rickman

Henri Nykänen

John Drake

Gerald Cois Byrd

Sanna Leena Mäkelä

Evie Kho

Andrea Trita

David Arlo Nelson

Jeffrey B Driscoll

Kevin Kinichi Masuda

Joyce Kai See Poon

Dong Yoon Oh

Zheng Yong

Aaron L Birkbeck

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 &#x3bc;m to 13 &#x3bc;m.

Integrated structure and manufacturing method thereof

A mirror and method of fabricating the mirror, the method comprising:

Waveguide mirror and method of fabricating a waveguide mirror

A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.

Waveguide modulator structures

An optical fiber adapter and method of fabricating the same from a wafer including a double silicon-on-insulator layer structure. The optical fiber adapter may include a mode converter, a trench, and a V-groove, the V-groove and the trench operating as passive alignment features for an optical fiber, in the transverse translational and rotational degrees of freedom, and in the longitudinal translational degree of freedom, respectively. The mode converter may include a buried tapered waveguide.

Mode converter and method of fabricating thereof

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

Waveguide optoelectronic device

An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.

Optical modulators

A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 &#x3bc;m; and wherein the separation between the second sidewall of the ridge and the second slab interface is no more than 10 &#x3bc;m.

Waveguide device and method of doping a waveguide device

An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

Optoelectronic component

An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

Optoelectronic device

An optical mode converter and method of fabricating the same from wafer including a double silicon-on-insulator layer structure. The method comprising: providing a first mask over a portion of a device layer of the DSOI layer structure; etching an unmasked portion of the device layer down to at least an upper buried oxide layer, to provide a cavity; etching a first isolation trench and a second isolation trench into a mode converter layer, the mode converter layer being: on an opposite side of the upper buried oxide layer to the device layer and between the upper buried oxide layer and a lower buried oxide layer, the lower buried oxide layer being above a substrate; wherein the first isolation trench and the second isolation trench define a tapered waveguide; filling the first isolation trench and the second isolation trench with an insulating material, so as to optically isolate the tapered waveguide from the remaining mode converter layer; and regrowing the etched region of the device layer.

A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and applying a metal coating to the underside surface.

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

An interposer chip for coupling light between an array of fibers and an array of optical waveguides on a second photonic chip. The interposer chip has an array of V-grooves for aligning the ends of the fibers to corresponding ends of an array of optical waveguides on the interposer chip. Each optical waveguide has a taper with a first end and a second end, the first end being configured to support an optical mode that couples efficiently to the mode of an optical fiber. The taper reduces the vertical mode size, so that the mode supported by the second end of the taper may be efficiently coupled to a 3-micron thick optical waveguide on the second photonic chip. The interposer chip further has a hard stop having a flat surface parallel to the optical waveguides on the interposer chip, at the interface to the second chip. When the interposer chip is flipped and assembled with the second chip, the hard stop abuts against a mounting surface on the second chip, so that optical waveguides on the interposer chip are aligned, in the vertical direction, with optical waveguides on the second chip.

Growing community of inventors

Pasadena, CA, United States of America

Damiana Lerose