Sandisk Technologies Inc.

Pure Storage, Inc.

Damian Pablo Yurzola

Rajeev Nagabhirava

Andrew R Bernat

Gordon James Coleman

Vidyabhushan Mohan

James Cihla

Iris McLeary

Melissa Kimble

Jungkeun Kim

Eran Sharon

Idan Alrod

Michael Altshuler

Madhuri Kotagiri

Hari Kannan

Itai Dror

Arjun Kapoor

Krishnamurthy Dhakshinamurthy

John Colgrove

Ethan L Miller

Jian Feng Chen

Sergey Anatolievich Gorobets

Timothy W Brennan

Eran Erez

Paul A Lassa

Gary Lin

Tal Heller

Matthew Davidson

Yong Peng

Yigal Eli

Neil D Hutchison

Talal Ahwal

Peter Hwang

Arjun Hary

Oren Shtrasberg

Tucker Dean Berckmann

Annie Chi-San Chang

Jian Chen

An indication is received from a storage device that an attempt to read a portion of data from a block of the storage device has failed. A command is transmitted to the storage device to perform a scan on data stored at the block comprising the portion of data to acquire failure information associated with a plurality of subsets of the data stored at the block. The failure information associated with the plurality of subsets of the data stored at the block is received from the storage device.

Acquiring failure information

Improving storage device performance including initiating, on a storage device, execution of a rehabilitative action from a set of rehabilitative actions that can be performed on the storage device; determining that the storage device is operating outside of a defined range of expected operating parameters after the rehabilitative action has been executed; and initiating execution of a higher level rehabilitative action responsive to determining that the higher level rehabilitative action exists.

Addressing storage device performance

Failure information associated with a plurality of blocks of a solid-state storage device of a plurality of solid-state storage devices is received. One or more blocks of the plurality of blocks storing uncorrectable data are identified based on the received failure information. A partial deallocation of the one or more blocks of the plurality of blocks is issued, the partial deallocation indicating that the one or more blocks store uncorrectable data. A remedial action associated with the one or more blocks of the plurality of blocks is performed.

Deallocation within a storage system

Online failure span determination

Rehabilitating storage devices in a storage array that includes a plurality of storage devices, including: receiving a request to rehabilitate a storage device that is operating outside of a defined range of expected operating parameters; selecting, from a hierarchy of rehabilitative actions that can be performed on the storage device, a rehabilitative action to perform on a storage device in dependence upon information describing a number of times that one or more of the rehabilitative actions have been performed on the storage device; and initiating execution of the selected rehabilitative action.

Performing rehabilitative actions on storage devices

Data resiliency by partially deallocating data blocks of a storage device

Self-healing storage devices

In a storage system that includes a plurality of storage devices, data protection may include, for each of the plurality of storage devices: encrypting data of the storage device using the device key for the storage device; and encrypting the device key for the storage device using a master secret; generating a plurality of shares from the master secret; and storing the encrypted data, the encrypted device key, and a separate share of the plurality of shares in each storage device.

Secret sharing data protection in a storage system

In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.

Bad column handling in flash memory

Rehabilitating storage devices in a storage array that includes a plurality of storage devices

Systems and methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A data fragment may correspond with data written into memory cells associated with one or more contiguous word lines within a memory block that does not include a bad word line. In some cases, firmware associated with a NAND flash memory device may identify one or more data fragments based on the location of bad word lines within a memory block. A word line defect may be considered a benign defect if the defect does not prevent memory cells connected to other word lines within a memory block from being programmed and/or read reliably.

NAND flash word line management using multiple fragment pools

Systems and methods are disclosed to improve the performance of a memory system by freeing up physical memory areas that correspond to logical block address ranges that have repeated data patterns. A controller detects data patterns in incoming data. When a data pattern is detected, the data is not written to non-volatile storage area. Rather, the logical block address range of the data is marked in a data structure as having pattern data. The pattern may also be recorded in the data structure as a pattern descriptor. Because the data having the data pattern is not written to the non-volatile storage area, the freed up corresponding physical memory area may be utilized by the memory system for other purposes, thereby improving the overall performance and endurance of the memory system.

Physical compression of data with flat or systematic pattern

Disclosed are apparatus and techniques for managing power in a memory system having a controller and nonvolatile memory array. In one embodiment, prior to execution of each command with respect to the memory array, a request for execution of such command is received with respect to the memory array. In response to receipt of each request for each command, execution of such command is allowed or withheld with respect to the memory array based on whether such command, together with execution of other commands, is estimated to exceed a predetermined power usage specification for the memory system.

Method and memory system for managing power based on semaphores and timers

Growing community of inventors

Sant Clara, CA, United States of America

Damian Pablo Yurzola