Triquint Semiconductor Texas, Inc.

Texas Instruments Corporation

Damian Costa

Darrell G Hill

William U Liu

Timothy S Henderson

Shou-Kong Fan

Ali Khatibzadeh

Hin-Fai Chau

A bipolar transistor includes a passivating layer of material 40 in the base structure 42 that serves to cover the extrinsic base region of the transistor. The passivating layer 40 is formed of a material having a wider bandgap than the base layer 44, and is heavily doped with the same doping type (n or p) as the base layer. The invention is advantageous in that the base contacts 48 of the device are made directly to the passivating layer 40 and are not in direct contact with the base layer 44. This eliminates the need for alloyed contacts and the concomitant reliability problems associated with spiking contacts. In addition, the invention is completely compatible with self-aligned production techniques.

Method of fabricating a bipolar transistor

Bipolar transistor

Growing community of inventors

Dallas, TX, United States of America

Damian Costa