Globalfoundries U.S. Inc.

Globalfoundries Inc.

Rensselaer Polytechnic Institute

Dali Shao

Hui Zang

Yusheng Bian

Judson Robert Holt

Tao Chu

Jie Lian

Liqiao Qin

Shayla Maya Sawyer

A hybrid fiber for detection of UV light is described. The hybrid fiber includes a conductor, a first layer, a photoactive layer, a second layer, and a transparent electrode. The conductor includes a conductive material. The first layer includes a first material deposited onto the conductor. The first material is configured to transport holes and block electrons. The photoactive layer includes a photoactive material coating the first layer. The photoactive material includes a first submaterial and a second submaterial. The second layer includes a second material deposited onto the photoactive layer. The second material is configured to block holes and transport electrons. The transparent electrode includes a transparent electrode material deposited onto the second layer.

Hybrid fiber for detection of UV light

Disclosed is a silicon-on-insulator (SOI) chip structure with a substrate-embedded optical waveguide. Also disclosed is a method for forming the SOI chip structure. In the method, an optical waveguide is formed within a trench in a bulk substrate prior to a wafer bonding process that results in the SOI structure. Subsequently, front-end-of-the-line (FEOL) processing can be performed to form additional optical devices and/or electronic devices in and/or above the silicon layer. By embedding an optical waveguide within the substrate prior to wafer bonding as opposed to forming it during FEOL processing, strict limitations on the dimensions of the core layer of the optical waveguide are avoided. The core layer of the substrate-embedded optical waveguide can be relatively large such that the cut-off wavelength can be relatively long. Thus, such a substrate-embedded optical waveguide brings different functionality to the SOI chip structure as compared to FEOL optical waveguides.

Silicon-on-insulator chip structure with substrate-embedded optical waveguide and method

One illustrative IC product disclosed herein includes a semiconductor substrate and a first transistor device formed on the semiconductor substrate. The first transistor device comprises a first gate structure. The first gate structure comprises a gate insulation layer, a first layer of titanium nitride (TiN) positioned above the gate insulation layer, a layer of titanium silicon nitride (TiSiN) positioned above the first layer of TiN and a second layer of titanium nitride (TiN) positioned above the layer of TiSiN.

Low leakage gate stack for a transistor device and methods of making an IC product that includes such a transistor device

A semiconductor device, comprising first and second sets of fins; first and second gate electrodes; first and second isolation structures each separating one of the gate electrodes into a first portion and a second portion; and first and second conductive structures wider than the corresponding isolation structure and disposed on an entirety of a top of the corresponding isolation structure and on a part of the top of each of the first and second portions of the corresponding gate electrode. A method for making the semiconductor device. A system configured to implement the method and manufacture the semiconductor device. The semiconductor device may have a low parasitic capacitance and high chip performance.

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Mechanicville, NY, United States of America

Dali Shao