Other

The United States of America As Represented by the Administrator of the

National Institute of Standards and Technology

Dale W Fitting

Paul Langford Carson

William P Dube

Thomas A Siewert

William H Prosser

Andrew L Robinson

Ronald D Kriz

Fred L Terry, Jr

Richard D Albert

Michel De Billy

Laszlo Adler

The present invention relates to x-ray diffraction measurement by using moving x-ray source x-ray diffraction. The invention comprises a raster-scanned x-ray source, a specimen, a collimator, and a detector. The x-ray source is electronically scanned which allows a complete image of the x-ray diffraction characteristics of the specimen to be produced. The specimen is placed remote from the x-ray source and the detector. The collimator is located directly in front of the detector. The x-rays are diffracted by the specimen at certain angles, which cause them to travel through the collimator and to the detector. The detector may be placed in any radial location relative to the specimen in order to take the necessary measurements. The detector can detect the intensity and/or the wavelength of the diffracted x-rays. All information needed to solve the Bragg equation as well as the Laue equations is available. The x-ray source may be scanned electronically or mechanically. The present invention is used to perform texture analysis and phase identification.

Method and apparatus for diffraction measurement using a scanning x-ray source

The present invention uses a high energy x-ray, neutron, or gamma source for monitoring the interface between a molten and solidified crystalline phase while in a furnace in a casting process. The radiation can also be used to determine the quality and orientation of the crystals in the crystalline phase. The invention uses the distinctive diffraction patterns produced by crystalline and amorphous phases to locate the interface.

Apparatus and method for monitoring casting process

An ultrasonic sensing array having ultrasonic transducer elements formed on a micromachined single-crystal semiconductor wafer provided with a deep recess under each transducer. Etch-altering dopants are diffused into the wafer to form rimmed support structures for dielectric stress-balanced elements. Composite dielectric layers are grown on both surfaces of the wafer. One composite layer serves as a diaphragm underlying the transducer elements. The other composite layer serves as a mask for etching away the substrate under each transducer element to form the deep recess while leaving the support structures and diaphragm layer. The resulting hollow or recess under each transducer element reduces the parasitic capacitance between the transducer and support substrate. The transducer elements are made by forming conductive bottom plates on the dielectric diaphragm layer, adding a piezoelectric polymer layer and thereafter forming the conductive top plates. The resulting ultrasonic sensors are capable of operation over a wide variety of frequencies with improved sensitivity and decreased acoustic crosstalk between sensor elements, Switching transistors may also be fabricated as part of the patterned semiconductor substrate.

Ultrasonic image sensing array with acoustical backing

An ultrasonic wave is applied to an anisotropic sample material in an initial direction and the intensity of the ultrasonic wave is measured on an opposite surface of the sample material by two adjacent receiving points located in an array of receiving points. A ratio is determined between the measured intensities of two adjacent receiving points, the ratio being indicative of an angle of flux deviation from the initial direction caused by an unknown applied load. This determined ratio is then compared to a plurality of ratios of a similarly tested, similar anisotropic reference material under a plurality of respective, known load conditions, whereby the load applied to the particular anisotropic sample material is determined. A related method is disclosed for determining the fiber orientation from known loads and a determined flux shift.

Method of determining load in anisotropic non-crystalline materials

An ultrasonic wave is applied to an anisotropic sample material in an initial direction and an angle of flux deviation of the ultrasonic wave front is measured from this initial direction. This flux deviation angle is induced by the unknown applied load. The flux shift is determined between this flux deviation angle and a previously determined angle of flux deviation of an ultrasonic wave applied to a similar anisotropic reference material under an initial known load condition. This determined flux shift is then compared to a plurality of flux shifts of a similarly tested, similar anisotropic reference material under a plurality of respective, known load conditions, whereby the load applied to the particular anisotropic sample material is determined. A related method is disclosed for determining the fiber orientation from known loads and a determined flux shift.

Methods of determining loads and fiber orientations in anisotropic

An ultrasonic sensing array having ultrasonic transducer elements formed on a micromachined single-crystal semiconductor wafer provided with a deep recess under each transducer. Etch-altering dopants are diffused into the water to form rimmed support structures for dielectric stress-balanced elements. Composite dielectric layers are grown on both surfaces of the wafer. One composite layer serves as a diaphragm underlying the transducer elements. The other composite layer serves as a mask for etching away the substrate under each transducer element to form the deep recess while leaving the support structures and diaphragm layer. The resulting hollow or recess under each transducer element reduces the parasitic capacitance between the transducer and support substrate. The transducer elements are made by forming conductive bottom plates on the dielectric diaphragm layer, adding a piezoelectric polymer layer and thereafter forming the conductive top plates. The resulting ultrasonic sensors are capable of operation over a wide variety of frequencies with improved sensitivity and decreased acoustic crosstalk between sensor elements. Switching transistors may also be fabricated as part of the patterned semiconductor substrate.

Ultrasonic image sensing array and method

The properties of the surface layer of a material are measured by a technique which employs the transmission of ultrasonic waves from varying angles of incidence into a specimen, from a transducer at a point spaced from the specimen. The backscattered waves are detected and evaluated from the varying angles to detect the local maximum intensity, from which the corresponding properties of the material are determined.

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Golden, CO, United States of America

Dale W Fitting