Applied Materials, Inc.

Anicon, Inc.

Dale R Dubois

Juan Carlos Rocha-Alvarez

Jianhua Zhou

Karthik Janakiraman

Paul B Comita

Ramprakash Sankarakrishnan

Arthur J Learn

Xing Lin

Alan F Morrison

Bozhi Yang

Mei Yin Chang

David K Carlson

Arkadii V Samoilov

Alexandros T Demos

Amir Hamed Al-Bayati

Mark A Fodor

Kien Nai Chuc

Bryant A Campbell

Manus K Wong

Nicholas E Miller

Sandy M Chew

Ralph F Manriquez

Ashish Shah

Abhijit Basu Mallick

Takashi Shimizu

Sanjeev Baluja

Ganesh Balasubramanian

Michal Danek

Bok Hoen Kim

Visweswaren Sivaramakrishnan

Eric Andrew Englhardt

Hichem M'Saad

Thomas E Nowak

Mandyam Sriram

Hari K Ponnekanti

Mukund Srinivasan

Lance A Scudder

Roger N Anderson

Lori D Washington

Mohamad A Ayoub

Kalyanjit Ghosh

Cissy S Leung

Mayur G Kulkarni

Yanjie Wang

Chiu Chan

Ronald Lloyd Rose

Marvin De-Dui Liao

Joseph C Werner

Khaled A Elsheref

Sungjin Kim

Yeh-Jen Kao

Lester A D'Cruz

Sophia M Velastegui

Rekha Ranganathan

Richard A Marsh

Bradley Mitchell Curelop

Ron L Rose

Hali J L Forstner

Naoyuki Iwasaki

David R Carlson

Shane D Clark

Eui Kyoon Kim

A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.

Multi-zone pedestal for plasma processing

Processing chambers having a lid with a lower surface, a substrate support with an upper surface facing the lid and an inner baffle ring between the substrate support and the lid are described. Methods of using the processing chamber are described.

Micro-volume deposition chamber

An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

Processing system containing an isolation region separating a deposition chamber from a treatment chamber

A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.

Process kit including flow isolator ring

A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.

Processing chamber with heated chamber liner

Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

Systems for plasma enhanced chemical vapor deposition and bevel edge etching

Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

Vacuum reaction chamber with x-lamp heater

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Method for constructing a film on a semiconductor wafer

A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800&deg; C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800&deg; C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.

Process and apparatus for cleaning a silicon surface

An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.

Backside heating chamber for emissivity independent thermal processes

A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.

Point-of-use exhaust by-product reactor

Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.

Substrate support shield in wafer processing reactors

A susceptor support arm assembly in a substrate processing chamber includes a secure ground connection between the susceptor and ground. An aluminum wire rope is welded to a winged terminal lug which is tightly inserted into a hole in a susceptor hub. The wings of the lug are then welded to the hub. The wire rope, now permanently attached to the susceptor hub, is routed through an opening in the susceptor end of a ceramic susceptor support arm, able to pass the ground end lug of the wire rope, through a channel in the support arm back to the susceptor arm support device, and to ground. The channel in the susceptor arm has grooves in its sides to receive a paddle shaped ceramic cover to enclose the channel and the bottom of the hub end of the susceptor arm. The cover insulates, isolates, and shields the grounding wire and thermocouple leads being routed from the susceptor hub back to the support end of the susceptor arm from exposure to the high intensity radiant energy directed at the back of the susceptor. Conical spring washers and shoulder screws, attach the metallic pieces (e.g. the susceptor hub) to the ceramic susceptor hub arm allowing for the differential thermal expansion between pieces without overstressing the ceramic material clamped. Surface treatment of the metallic pieces enhances their corrosion resistance.

Welded susceptor assembly

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Los Gatos, CA, United States of America

Dale R Dubois