Raytheon Company

Dale L Montrone

Edward T Lewis

A semiconductor device referred to as complementary metal electrode semiconductor (CMES) has p-type and n-type silicon MESFETs interconnected on a substrate with an n-type barrier enhancement implanted into the p-channel of the p-type MESFET. The structure and method of fabrication are provided for forming a CMES logic inverter which has characteristics of very low power, low voltage, low noise and high speed.

Method of making a complementary metal electrode semiconductor device

Complementary metal electrode semiconductor device

An adder/subtractor wherein N/2 two bit adders are connected to allow the addition of numbers having N bits, each one of the two bit adders having associated control circuitry adapted: (a) to cause each two bit adder either to add applied bits directly or to add one applied bit and the 'two's complement' of the other bit; and (b) to electrically separate any selected ones of the two bit adders from the others.

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Londonderry, NH, United States of America

Dale L Montrone